Effect of Laser Plasma X-ray Irradiation on Nucleation in Amorphous Silicon Film
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概要
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The effects of laser plasma X-ray (LPX) irradiation on amorphous silicon (a-Si) film structure and the density of states around the edge of the valence and conduction bands were investigated for low-temperature crystallization. An LPX with a photon energy of 115 eV was generated by a Nd:YAG excitation laser using solid Xe. The Raman spectra of a-Si films were not changed by LPX irradiation. However, the optical transmittance of a-Si film was increased by LPX irradiation at approximately 570 nm. This phenomenon relates to the movement of Si atoms to the quasi-nuclei phase in a-Si film.
- 2009-05-25
著者
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HEYA Akira
Department of Materials Science & Chemistry, University of Hyogo
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Amano Sho
Laboratory Of Advanced Science And Technolgy For Industory Himeji Institute Of Technology
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Miyamoto Shuji
Laboratory Of Advanced Science And Technology For Industry (lasti) University Of Hyogo
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Mochizuki Takayasu
Laboratory Of Advanced Science And Technolgy For Industory Himeji Institute Of Technology
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Takanashi Yasuyuki
Department of Materials Science and Chemistry, University of Hyogo, 2280 Shosha, Himeji, Hyogo 671-2201, Japan
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Matsuo Naoto
Department of Electrical & Electronic Engineering, Yamaguchi University
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Miyamoto Shuji
Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo, 3-2-1 Koto, Kamigori, Hyogo 678-1205, Japan
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Mochizuki Takayasu
Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo, 3-2-1 Koto, Kamigori, Hyogo 678-1205, Japan
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Takanashi Yasuyuki
Department of Materials Science and Chemistry, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, Japan
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Amano Sho
Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo, 3-2-1 Koto, Kamigori, Hyogo 678-1205, Japan
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