Influence of Post Excimer Laser Annealing on Crystallinity of Precursor Polycrystalline Si Film Formed by Solid Phase Crystallization
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概要
- 論文の詳細を見る
The crystallinity of polycrystalline Si (poly-Si) film produced by the combined method of solid phase crystallization (SPC) followed by excimer laser annealing (ELA) or ELA followed by SPC is examined by observing the internal stress and the crystal defect. Tensile stress relaxation occurred when SPC was performed before or after ELA. The defect densities of poly-Si films recrystallized by ELA, ELA followed by SPC, and SPC followed by ELA decrease in this order.
- 日本真空協会の論文
- 2007-08-20
著者
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MATSUO Naoto
Department of Materials Science & Chemistry, University of Hyogo
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HEYA Akira
Department of Materials Science & Chemistry, University of Hyogo
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KAWAMOTO Naoya
Department of Electrical and Electronic Engineering, Yamaguchi University
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Miyoshi Tadaki
Department Of Electrical And Electronic Engineering Yamaguchi University
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Heya Akira
Department Of Materials Science & Chemistry University Of Hyogo
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Kawamoto N
Department Of Electrical And Electronic Engineering Yamaguchi University
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Miyoshi Tadaki
Department Of Electrical And Electronic Engineering
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Mochizuki Takayasu
Laboratory Of Advanced Science And Technology For Industry (lasti) University Of Hyogo
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Kawamoto Naoya
Department Of Electrical And Electronic Engineering Yamaguchi University
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Matsuo N
Department Of Materials Science & Chemistry University Of Hyogo
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Matsuo Naoto
Univ. Hyogo Hyogo
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Matsuo Naoto
Department Of Electrical And Electronic Engineering Yamaguchi University
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Miyoshi T
Department Of Electrical And Electronic Engineering Yamaguchi University
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Matsuo Naoto
Department of Electrical & Electronic Engineering, Yamaguchi University
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Miyoshi Tadaki
Department of Electrical & Electronic Engineering, Yamaguchi University
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Kawamoto Naoya
Department of Electrical & Electronic Engineering, Yamaguchi University, 2557 Tokiwadai, Ube 755-8611, Japan
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