Characteristics of Recrystallized poly-Si Film Prepared by ELA of a-Si Deposited on SiO2 / SiN / Glass Using PE-CVD Method
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概要
- 論文の詳細を見る
In this study, we investigate the characteristic of the poly-Si film prepared by the excimer laser annealing (ELA) method of a-Si deposited using plasma enhanced chemical vapor deposition (PE-CVD) method on SiO2 / SiN / glass substrate (SiN substrate). The crystallinity of the poly-Si film on the SiN substrate is better than that using low pressure chemical vapor deposition (LPCVD) method on the quartz glass substrate (quartz substrate). The grain size of the poly-Si on the SiN substrate is smaller than that on the quartz substrate. These phenomena are due to the difference of the crystal growth mechanism. The stress in the poly-Si film on the SiN substrate is smaller than that on the quartz substrate. For the crystal growth mechanism on the SiN substrate, it is considered that hydrogens in the poly-Si play an important role.
- 山口大学工学部の論文
著者
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Hamada H
Materials And Devices Development Center Bu Sanyo Electric Co. Ltd.
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Kawamoto N
Department Of Electrical And Electronic Engineering Yamaguchi University
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Matsuo N
Department Of Materials Science & Chemistry University Of Hyogo
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Matsuo Naoto
Univ. Hyogo Hyogo
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Nouda T
Sanyo Electric Co. Ltd. Gifu Jpn
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NOUDA Tomoyuki
ANYO Electric Co., Ltd., Microelectronics Res. Cent.
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Abe Hisashi
Materials And Devices Development Center Sanyo Electric Co. Ltd.
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Taguchi Ryouhei
Department Of Electrical & Electronic Engineering Yamaguchi University
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