Effects of Various Hydrogenation Processes on Bias-Stress-Induced Degradation in p-Channel Polysilicon Thin Film Transistors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-08-15
著者
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Hamada Hiroki
Sanyo Electric Co. Ltd. Microelectronics Res. Cent.
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Hamada H
Hitachi Ltd. Tokyo Jpn
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Hamada Hiroki
Materials Characterization Research Laboratory Nippon Steel Corporation
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Jeong Y
Samsung Advanced Inst. Of Technol. Kyungki‐do Kor
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Nouda T
Sanyo Electric Co. Ltd. Gifu Jpn
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KUWANO Hiroshi
Department of Electrical Engineering, Faculty of Science and Technology, Keio University
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Kuwano H
Department Of Electrical Engineering Faculty Of Science And Technology Kejo Unitersity
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JEONG Yunsik
Department of Electrical Engineering. Faculty of Science and Technology, Kejo University
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NAGASHIMA Dai
Department of Electrical Engineering, Faculty of Science and Technology, Kejo University
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NOUDA Tomoyuki
SANYO Electric Co., Ltd., Microelectronics Res. Cent.
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NOUDA Tomoyuki
ANYO Electric Co., Ltd., Microelectronics Res. Cent.
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Nagashima Dai
Department Of Electrical Engineering Faculty Of Science And Technology Kejo Unitersity
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Kuwano Hiroshi
Department Of Electrical Engineering Faculty Of Science And Technology Keio University
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Jeong Yunsik
Department Of Electrical Engineering. Faculty Of Science And Technology Kejo Unitersity
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