Mechanisms of Electrical Stress-Induced Degradation in H_2/Plasma Hydrogenated n- and p-Channel Polysilicon Thin Film Transistors
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-08-15
著者
-
Hamada Hiroki
Sanyo Electric Co. Ltd. Microelectronics Res. Cent.
-
Hamada H
Hitachi Ltd. Tokyo Jpn
-
Hamada Hiroki
Materials Characterization Research Laboratory Nippon Steel Corporation
-
Jeong Y
Samsung Advanced Inst. Of Technol. Kyungki‐do Kor
-
Nouda T
Sanyo Electric Co. Ltd. Gifu Jpn
-
KUWANO Hiroshi
Department of Electrical Engineering, Faculty of Science and Technology, Keio University
-
Kuwano H
Department Of Electrical Engineering Faculty Of Science And Technology Kejo Unitersity
-
JEONG Yunsik
Department of Electrical Engineering. Faculty of Science and Technology, Kejo University
-
NAGASHIMA Dai
Department of Electrical Engineering, Faculty of Science and Technology, Kejo University
-
NOUDA Tomoyuki
ANYO Electric Co., Ltd., Microelectronics Res. Cent.
-
Nagashima Dai
Department Of Electrical Engineering Faculty Of Science And Technology Kejo Unitersity
-
Nouda Tomoyuki
Anyo Electric Co. Ltd. Microelectronics Res. Cent.
-
Kuwano Hiroshi
Department Of Electrical Engineering Faculty Of Science And Technology Keio University
-
Jeong Yunsik
Department Of Electrical Engineering. Faculty Of Science And Technology Kejo Unitersity
関連論文
- Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing - Dependences of Poly-Si Grain on Energy Density and Shot Number -
- Influence of Hydrogen in a-Si on Recrystallization of Low-Temperature Processed Poly-Si Film by Excimer Laser Annealing
- Study of Crystal Growth Mechanism for Poly-Si Film Prepared by Excimer Laser Annealing
- Grain Morphology of Recrystallized Polycrystalline-Si Film by Excimer Laser Annealing
- Characteristics of Recrystallized poly-Si Film Prepared by ELA of a-Si Deposited on SiO2 / SiN / Glass Using PE-CVD Method
- Characterization of Poly-Silicon Film Prepared by Excimer Laser Annealing
- Relation between Cu L X-Ray and Cu 2p Photoelectron in YBa_2Cu_3O_y
- Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Excimer Laser Annealing in Ge-Ion-Implanted Amorphous Silicon Films
- A Negative Resistance in a MOS Structure
- Annealing Behavior of Defects Induced by Self-Implantation in Si
- Damage and Its Rapid Thermal Annealing Behavior of 1 MeV Ar^+-Ion-Implanted Silicon
- Effects of Crystal Originated Particles on Breakdown Characteristics of Ultra Thin Gate Oxide
- Reduction of Mobile Pt Ion Density in SiO_2 and Si-SiO_2 Interface State Density in Pt-diffused Metal-Oxide-Semiconductor Structures
- Improvement of Electrical Characteristics of Pt-Diffused Devices
- Effects of Various Hydrogenation Processes on Bias-Stress-Induced Degradation in p-Channel Polysilicon Thin Film Transistors
- Mechanisms of Electrical Stress-Induced Degradation in H_2/Plasma Hydrogenated n- and p-Channel Polysilicon Thin Film Transistors
- Lateral Solid Phase Recrystallization from the Crystal Seed in Ge-Ion-Implanted Amorphous Silicon Films by Repetition Rapid Thermal Annealing
- Compact Magneto-Optical Head Module Integrated with Chip Elements using Double Holograms
- Thin Optical Head with Flip-Chip Bonded Module for Compact Disc Read Only Memory Drives
- Origin of Infrared Photoluminescence of Nanocrystalline Si in SiO_2 Films
- Effects of Denudation Anneal of Silicon Wafer on the Characteristics of Ultra Large-Scale Integration Devices
- Reduction of Leakage Current and Minority Carrier Lifetime in Platinum-Diffused pn Diodes
- 3. Role of Rho GTPases and its malignancy potential of human esophageal squamous cell carcinoma cells in mice
- Lateral Solid Phase Recrystallization from the Crystal Seed in Ge-Ion-Implanted Amorphous Silicon Films by Repetition Rapid Thermal Annealing
- Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Excimer Laser Annealing in Ge-Ion-Implanted Amorphous Silicon Films