Lateral Solid Phase Recrystallization from the Crystal Seed in Ge-Ion-Implanted Amorphous Silicon Films by Repetition Rapid Thermal Annealing
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-01
著者
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Hamada Hiroki
Sanyo Electric Co. Ltd. Microelectronics Res. Cent.
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Hamada H
Hitachi Ltd. Tokyo Jpn
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NOHDA Tomoyuki
Sanyo Electric Co., Ltd.
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Nohda Tomoyuki
Sanyo Electric Co. Ltd.
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SEO Jin-Wook
Department of Electrical Engineering, Faculty of Science and Technology, Keio University
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AYA Yoichiro
SANYO Electric Co. Ltd., Microelectronics Res. Cent.
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KUWANO Hiroshi
Department of Electrical Engineering, Faculty of Science and Technology, Keio University
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KOKUBO Yoshitaka
Department of Electrical Engineering, Faculty of Science and Technology, Keio University
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- Lateral Solid Phase Recrystallization from the Crystal Seed in Ge-Ion-Implanted Amorphous Silicon Films by Repetition Rapid Thermal Annealing
- Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Excimer Laser Annealing in Ge-Ion-Implanted Amorphous Silicon Films