Lateral Solid Phase Recrystallization from the Crystal Seed in Ge-Ion-Implanted Amorphous Silicon Films by Repetition Rapid Thermal Annealing

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概要

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• Lateral solid-phase recrystallization (LSPR) from the crystal seed selectively formed by excimer laser annealing in Ge-ion-implanted amorphous silicon (a-Si) is performed by rapid thermal annealing (RTA). The process is carried out as a basic research study to grow grains in the current direction along the channel from the drain to the source in poly-Si thin film transistors. In this letter, it is shown that repetition RTA, in which on/off of the setting temperature is periodically repeated with a certain heat pulse width, suppresses the random nucleation in a-Si films and enlarges LSPR grains compared with single RTA, when the heat pulse width is sufficiently shorter than the incubation time which is the time before the onset of nucleation.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-04-15

著者

• Hamada Hiroki

  Sanyo Electric Co. Ltd. Microelectronics Res. Cent.

• Nohda Tomoyuki

  Sanyo Electric Co. Ltd.

• SEO Jin-Wook

  Department of Electrical Engineering, Faculty of Science and Technology, Keio University

• Aya Yoichiro

  Sanyo Electric Co. Ltd. Microelectronics Res. Cent.

• KOKUBO Yoshitaka

  Department of Electrical Engineering, Faculty of Science and Technology, Keio University

• Kuwano Hiroshi

  Department Of Electrical Engineering Faculty Of Science And Technology Keio University

• Nohda Tomoyuki

  SANYO Electric Co. Ltd., Microelectronics Res. Cent., 180, Ohmori, Anpachi-cho, Anpachi-gun, Gifu 503-0195, Japan

• Kokubo Yoshitaka

  Department of Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama 223-8522, Japan

関連論文

• Lateral Grain Growth of Poly-Si Films with a Specific Orientation by an Excimer Laser Annualing Method
• Comprehensive Study of Lateral Grain Growth in Poly-Si Films by Excimer Laser Annealing and Its Application to Thin Film Transistors
• Enlargement of Poly-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance Poly-Si Thin Film Transistor
• Improving the Uniformity of Poly-Si Films Using a New Excimer Laser Annealing Method for Giant-Microelectronics
• Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Excimer Laser Annealing in Ge-Ion-Implanted Amorphous Silicon Films
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• Mechanisms of Electrical Stress-Induced Degradation in H_2/Plasma Hydrogenated n- and p-Channel Polysilicon Thin Film Transistors
• Lateral Solid Phase Recrystallization from the Crystal Seed in Ge-Ion-Implanted Amorphous Silicon Films by Repetition Rapid Thermal Annealing
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• Origin of Infrared Photoluminescence of Nanocrystalline Si in SiO_2 Films
• Effects of Denudation Anneal of Silicon Wafer on the Characteristics of Ultra Large-Scale Integration Devices
• Lateral Solid Phase Recrystallization from the Crystal Seed in Ge-Ion-Implanted Amorphous Silicon Films by Repetition Rapid Thermal Annealing
• Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Excimer Laser Annealing in Ge-Ion-Implanted Amorphous Silicon Films

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