Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Excimer Laser Annealing in Ge-Ion-Implanted Amorphous Silicon Films
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概要
- 論文の詳細を見る
A new recrystallization method improving the electrical properties of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) and reducing the fluctuation of the electrical characteristics among them is proposed. It can be realized by the amorphization of poly-Si films through Ge-ion implantation, the crystallization of the drain region, which functions as a crystal seed in the subsequent process, through excimer laser annealing (ELA), and lateral solid-phase recrystallization (LSPR) from the drain to the source along the channel through furnace annealing. In this study, basic experiments are performed to determine the optimum condition of ELA for the formation of the crystal seed with good crystallinty and to investigate the aspect of LSPR growth from the seed.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2000-09-15
著者
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Hamada Hiroki
Sanyo Electric Co. Ltd. Microelectronics Res. Cent.
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Nohda Tomoyuki
Sanyo Electric Co. Ltd.
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Akiyama Satoru
Department Of Electrical Engineering Faculty Of Science And Technology Keio University
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SEO Jin-Wook
Department of Electrical Engineering, Faculty of Science and Technology, Keio University
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Aya Yoichiro
Sanyo Electric Co. Ltd. Microelectronics Res. Cent.
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Kuwano Hiroshi
Department Of Electrical Engineering Faculty Of Science And Technology Keio University
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Kanaya Masatoshi
Ion Engineering Research Institute
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Kajiyama Kenji
Ion Engineering Research Institute
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Akiyama Satoru
Department of Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama 223-8522, Japan
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Kanaya Masatoshi
Ion Engineering Research Institute Co., 2-8-1 Tsuda-Yamate, Hirakata, Osaka 573-0128, Japan
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