Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Excimer Laser Annealing in Ge-Ion-Implanted Amorphous Silicon Films
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-09-15
著者
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Hamada Hiroki
Sanyo Electric Co. Ltd. Microelectronics Res. Cent.
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Hamada H
Hitachi Ltd. Tokyo Jpn
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NOHDA Tomoyuki
Sanyo Electric Co., Ltd.
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KAJIYAMA Kenji
Ion Engineering Research Institute Corporation
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Nohda Tomoyuki
Sanyo Electric Co. Ltd.
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KANAYA Masatoshi
Ion Engineering Research Institute Corporation
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Akiyama Satoru
Department Of Electrical Engineering Faculty Of Science And Technology Keio University
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SEO Jin-Wook
Department of Electrical Engineering, Faculty of Science and Technology, Keio University
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AYA Yoichiro
SANYO Electric Co. Ltd., Microelectronics Res. Cent.
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KUWANO Hiroshi
Department of Electrical Engineering, Faculty of Science and Technology, Keio University
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Aya Yoichiro
Sanyo Electric Co. Ltd. Microelectronics Res. Cent.
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Seo J‐w
Chung‐ang Univ. Kyunggi‐do Kor
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Kajiyama Kenji
Ion Engineering Research Institute Co.
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Kuwano Hiroshi
Department Of Electrical Engineering Faculty Of Science And Technology Keio University
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Kanaya Masatoshi
Ion Engineering Research Institute Co.
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Kanaya Masatoshi
Ion Engineering Research Institute
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Kajiyama Kenji
Ion Engineering Research Institute
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- Lateral Solid Phase Recrystallization from the Crystal Seed in Ge-Ion-Implanted Amorphous Silicon Films by Repetition Rapid Thermal Annealing
- Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Excimer Laser Annealing in Ge-Ion-Implanted Amorphous Silicon Films