Effects of Crystal Originated Particles on Breakdown Characteristics of Ultra Thin Gate Oxide
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概要
- 論文の詳細を見る
- 1999-11-15
著者
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Cha Young-kuk
Process Development Team Memory Business Hq Lg Semicon Ltd.
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Shim H‐s
Kaeri Taejon Kor
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Cho Won-ju
Process Development Team Hyundai Micro-electronics Ltd.:(present Address)material Science Division E
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Cho Won-ju
Process Development Team Memory Business Hq Lg Semicon Ltd.
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Lee Kyo-sung
Process Development Team Memory Business Hq Lg Semicon Ltd.
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KUWANO Hiroshi
Department of Electrical Engineering, Faculty of Science and Technology, Keio University
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Kim Young-cheol
Process Development Team Memory Business Hq Lg Semicon Ltd.
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Park Chang-woo
Process Development Team Memory Business Hq Lg Semicon Ltd.
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Kuwano Hiroshi
Department Of Electronics And Electrical Engineering Faculty Of Science And Technology Keio Universi
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SHIM Hyun-suk
Process Development Team, Memory Business HQ, LG Semicon Ltd.
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Kuwano Hiroshi
Department Of Electrical Engineering Faculty Of Science And Technology Keio University
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- Effects of Crystal Originated Particles on Breakdown Characteristics of Ultra Thin Gate Oxide
- Effects of Various Hydrogenation Processes on Bias-Stress-Induced Degradation in p-Channel Polysilicon Thin Film Transistors
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- Effects of Denudation Anneal of Silicon Wafer on the Characteristics of Ultra Large-Scale Integration Devices
- Lateral Solid Phase Recrystallization from the Crystal Seed in Ge-Ion-Implanted Amorphous Silicon Films by Repetition Rapid Thermal Annealing
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