Damage and Its Rapid Thermal Annealing Behavior of 1 MeV Ar^+-Ion-Implanted Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-02-15
著者
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Kim Kwang
Faculty Of Science And Technology Keio University
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Hahn Soo
Department Of Materials Science And Engineering Stanford University
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KUWANO Hiroshi
Faculty of Science and Technology, Keio University
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Kwon Young
Semiconductor Research Laboratory Research Institute Of Industrial Science & Technology
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Kuwano H
Department Of Electrical Engineering Faculty Of Science And Technology Kejo Unitersity
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Kuwano Hiroshi
Faculty Of Science And Technology Keio University
関連論文
- Effects of Platinum Diffusion on MOS System
- Annealing Behavior of Defects Induced by Self-Implantation in Si
- Damage and Its Rapid Thermal Annealing Behavior of 1 MeV Ar^+-Ion-Implanted Silicon
- Reduction of Mobile Pt Ion Density in SiO_2 and Si-SiO_2 Interface State Density in Pt-diffused Metal-Oxide-Semiconductor Structures
- Improvement of Electrical Characteristics of Pt-Diffused Devices
- Surface Effects on Leakage Current and Lifetime in Pt Diffused Planar Silicon p^+n Diodes
- Effects of Various Hydrogenation Processes on Bias-Stress-Induced Degradation in p-Channel Polysilicon Thin Film Transistors
- Mechanisms of Electrical Stress-Induced Degradation in H_2/Plasma Hydrogenated n- and p-Channel Polysilicon Thin Film Transistors
- Platinum as Recombination-Generation Centers in Silicon
- Dose Dependence of Recrystallization Behavior in Germanium-Ion-Implanted Polycrystalline Silicon Films
- Control of Resistivity of Polycrystalline Si Films by Solid-Phase Recrystallization (SPR) : Semiconductors and Semiconductor Devices
- Reduction of Leakage Current and Minority Carrier Lifetime in Platinum-Diffused pn Diodes
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