Determination of the Energy Distribution of Grain Boundary Traps in Polycrystalline Silicon Films
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概要
- 論文の詳細を見る
The energy distribution of grain boundary traps in polycrystalline silicon films is determined from the activation energy of resistivity measured as a function of boron and phosphorus doping concentrations. The energy distribution is expressed as the Gaussian distribution with its center located at 0.10 eV under the midgap and the standard deviation of 0.18 eV.
- 社団法人応用物理学会の論文
- 1992-10-01
著者
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KUWANO Hiroshi
Faculty of Science and Technology, Keio University
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Kuwano Hiroshi
Faculty Of Science And Technology Keio University
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YAMAMOTO Ichiro
Faculty of Science and Technology, Keio University
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