Dose Dependence of Recrystallization Behavior in Germanium-Ion-Implanted Polycrystalline Silicon Films
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概要
- 論文の詳細を見る
Recrystallization behavior in polycrystalline silicon (poly-Si) films amorphized by germanium ion (Ge^+) implantation on a SiO_2 layer is investigated. The nucleation rate decreases as the Ge^+ dose increases, which is strongly related to the increase in the disordered states in as-implanted amorphous Si films. The growth rate first increases and then decreases as the Ge^+ dose increases, which can be explained by the strain effect induced by Ge atoms. The grain size of recrystallized poly-Si films increases as the Ge^+ dose increases. The optimum implantation dose to achieve good crystallinity is found to be 1×10^<15> ions/cm^2.
- 社団法人応用物理学会の論文
- 1995-07-01
著者
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Kuwano Hiroshi
Faculty Of Science And Technology Keio University
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Matsui Takayuki
Faculty Of Science And Technology Keio University
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KANG Myeon-Koo
Faculty of Science and Technology, Keio University
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Kang Myeon-koo
Faculty Of Science And Technology Keio University
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