Oscillation in Semiconductors with a Dumbbell-Shaped Structure
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概要
- 論文の詳細を見る
A new model of current oscillation observed in the current saturation regime of the current-voltage characteristic in semiconductors with a dumbbell-shaped structure is proposed. As the electron and hole drift velocities deviate from Ohm's law, an electric double layer is formed on the anode side of the narrow region of a sample and a negative resistance region appears on the cathode side. These formations in the sample cause the current oscillation. Experimental measurements of the potential distributions in the sample are carried out for n-type germanium and it is shown that these results can be explained well by the proposed model.
- 社団法人応用物理学会の論文
- 1982-06-20
著者
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Endo Katsumi
Faculty Of Science And Technology Keio University
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Kuwano Hiroshi
Faculty Of Science And Technology Keio University
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INTO Jun-ichi
Faculty of Science and Technology, Keio University
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Into Jun-ichi
Faculty Of Science And Technology Keio University
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