Reduction of Leakage Current and Minority Carrier Lifetime in Platinum-Diffused pn Diodes
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概要
- 論文の詳細を見る
We propose a novel method to control the depth profiles of platinum-related trap concentration in platinum-diffused silicon p^+n diodes and to improve their electrical properties, leakage current and lifetime. Platinum has been introduced into silicon wafers and p^+n diodes by one- or two-step heat treatment. The experimental results show that we can simultaneously minimize the leakage current and minority carrier lifetime, especially by the two-step heat treatment. This is the first proposal to overcome the trade-off relationship between the leakage current and lifetime. The experiment also proves that the dominant level for both the leakage current and minority carrier lifetime is a level at Ec-0.52 eV.
- 社団法人応用物理学会の論文
- 1993-09-15
著者
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SAGALA Pahlawan
Faculty of Science and Technology, Keio University
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Kuwano H
Department Of Electrical Engineering Faculty Of Science And Technology Kejo Unitersity
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Kuwano Hiroshi
Faculty Of Science And Technology Keio University
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Sagala Pahlawan
Faculty Of Science And Technology Keio University
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