Control of Resistivity of Polycrystalline Si Films by Solid-Phase Recrystallization (SPR) : Semiconductors and Semiconductor Devices
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概要
- 論文の詳細を見る
The effect of the grain size after solid-phase recrystallization (SPR) on the resistivity of polycrystalline Si (poly-Si) films was investigated in detail. SPR poly-si films were obtained by amorphization by Si ion implantation and by subsequent recrystallization by low-temperature furnace annealing. Resistivity could be precisely controlled by choosing the doping concentration and by full amorphization and recrystallization at a temperature. This was due to the controlled increased in grain size and the decrease in trapping state density per unit volume. An advanced model on the resistivity was proposed in which the resistivity dependence on the dopant concentration was well explained. It was indicated that the grain boundary of SPR poly-Si films exhibits the same electrical characteristics as that of as-deposited films
- 社団法人応用物理学会の論文
- 1988-12-20
著者
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Mizushima Ichiro
Faculty Of Science And Technology Keio University
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Kuwano Hiroshi
Faculty Of Science And Technology Keio University
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TABUCHI Wataru
Faculty of Science and Technology, Keio University
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Tabuchi Wataru
Faculty Of Science And Technology Keio University
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- Improvement of Electrical Characteristics of Pt-Diffused Devices
- Surface Effects on Leakage Current and Lifetime in Pt Diffused Planar Silicon p^+n Diodes
- Platinum as Recombination-Generation Centers in Silicon
- Dose Dependence of Recrystallization Behavior in Germanium-Ion-Implanted Polycrystalline Silicon Films
- Control of Resistivity of Polycrystalline Si Films by Solid-Phase Recrystallization (SPR) : Semiconductors and Semiconductor Devices
- Reduction of Leakage Current and Minority Carrier Lifetime in Platinum-Diffused pn Diodes
- Oscillation in Semiconductors with a Dumbbell-Shaped Structure
- Determination of the Energy Distribution of Grain Boundary Traps in Polycrystalline Silicon Films