Silicon Resonant Tunneling Metal-Oxide-Semiconductor Transistor for Sub-0.1μm Era(Special Issue on Advanced Sub-0.1μm CMOS Devices)
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概要
- 論文の詳細を見る
The characteristics of the Si resonant tunneling metal-oxide-semiconductor transistor (SRTMOST), which has double-barriers at the both edges of the channel, is examined from viewpoints of the substitution for conventional metal-oxide-semiconductor field-effect transistor (MOSFET) in the sub-0.1μm era. The influence of the double-barriers on the suppression of the drain currents at the gate-off condition is discussed, and the feasibility of the three-valued logic circuit which is composed of the p-MOSFET and the n-SRTMOST is also shown theoretically.
- 社団法人電子情報通信学会の論文
- 2002-05-01
著者
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HAMADA Hiroki
Microelectronics Research Center, SANYO Electric Co., Ltd.
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Hamada Hiroki
Microelectronics Research Center Sanyo Electric Co. Lid.:(present Address) Microelectronics Research
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Hamada H
Microelectronics Research Center Sanyo Electric Co. Ltd
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MATSUO Naoto
The Department of Electrical and Electronic Engineering, Yamaguchi University
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TAKAMI Yoshinori
The Department of Electrical and Electronic Engineering, Yamaguchi University
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NOZAKI Takahiro
The Department of Electrical and Electronic Engineering, Yamaguchi University
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Matsuo N
Department Of Materials Science & Chemistry University Of Hyogo
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Matsuo N
Univ. Hyogo Hyogo Jpn
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Matsuo Naoto
Univ. Hyogo Hyogo
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Nozaki Takahiro
The Department Of Electrical And Electronic Engineering Yamaguchi University
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Matsuo Naoto
The Department Of Electrical And Electronic Engineering Yamaguchi University
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Takami Yoshinori
The Department Of Electrical And Electronic Engineering Yamaguchi University
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HAMADA Hiroki
Microelectronics Resarth Center,SANYO Electric Co.,Lyd
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