Properties of SiO_2 Surface and Pentacene OTFT Subjected to Atomic Hydrogen Annealing

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概要

• 論文の詳細を見る

• Effects of atomic hydrogen annealing (AHA) on the film properties and the electrical characteristics of pentacene organic thin-film transistors (OTFTs) are investigated. The surface energy of SiO2 surface and grain size of pentacene film were decreased with increasing AHA treatment time. For the treatment time of 300s, pentacene film showed the (00l) and (011) orientation and high carrier mobility in spite of small crystal grain.

• （社）電子情報通信学会の論文
• 2010-10-01

著者

• Matsuo Naoto

  The Department Of Electrical And Electronic Engineering Yamaguchi University

• Matsuo Naoto

  The Department Of Materials Science And Chemistry University Of Hyogo

• Heya Akira

  The Department Of Materials Science And Chemistry University Of Hyogo

関連論文

• Silicon Resonant Tunneling Metal-Oxide-Semiconductor Transistor for Sub-0.1μm Era(Special Issue on Advanced Sub-0.1μm CMOS Devices)
• Properties of SiO_2 Surface and Pentacene OTFT Subjected to Atomic Hydrogen Annealing

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