Polysilicon Thin-Film Transistors Processed at Low Temperature (≦ 600℃) Using Solid-Phase Crystallization in Wet Oxygen Atmosphere

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概要

• 論文の詳細を見る

• The spin density and oxygen concentration of polysilicon films have been successfully reduced using a novel solid-phase-crystallization (SPC) method in an ambient of wet oxygen. The threshold voltage (V_<th>), subthreshold swing (S) and field-effect mobility (μFE) for thin-film transistors (TFTs) processed at ≦ 600℃ using the polysilicon films were 2.0 V, 0.27 V/dec, and 〜35 cm^2/V・s, respectively. This performance was achieved with one-third less plasma hydrogeneration time than that of the conventional SPC method in an ambient of nitrogen.

• 社団法人応用物理学会の論文
• 1996-06-01

著者

• Hamada H

  Sanyo Electric Co. Ltd. Gifu Jpn

• Okita Yuji

  Microelectronics Research Center Sanyo Electric Co. Lid.

• Hamada Hiroki

  Microelectronics Research Center Sanyo Electric Co. Lid.:(present Address) Microelectronics Research

• SASAKI Akihumi

  Microelectronics Research Center, SANYO Electric Co., Lid.

• NIINA Tatuhiko

  Microelectronics Research Center, SANYO Electric Co., Lid.

• Sasaki Akihumi

  Microelectronics Research Center Sanyo Electric Co. Lid.

• Niina Tatuhiko

  Microelectronics Research Center Sanyo Electric Co. Lid.:(present Address) Device Business Headquart

• HAMADA Hiroki

  Microelectronics Resarth Center,SANYO Electric Co.,Lyd

関連論文

• Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing - Dependences of Poly-Si Grain on Energy Density and Shot Number -
• Influence of Hydrogen in a-Si on Recrystallization of Low-Temperature Processed Poly-Si Film by Excimer Laser Annealing
• Extension of Physical Limit of Conventional Metal-Oxide-Semiconductor Transistor by Double Barriers Formed at the Channel Edges
• Study of Crystal Growth Mechanism for Poly-Si Film Prepared by Excimer Laser Annealing
• Grain Morphology of Recrystallized Polycrystalline-Si Film by Excimer Laser Annealing
• Characterization of Poly-Silicon Film Prepared by Excimer Laser Annealing
• Silicon Resonant Tunneling Metal-Oxide-Semiconductor Transistor for Sub-0.1μm Era(Special Issue on Advanced Sub-0.1μm CMOS Devices)
• Polysilicon Thin-Film Transistors Processed at Low Temperature (≦ 600℃) Using Solid-Phase Crystallization in Wet Oxygen Atmosphere

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