Properties of SiO2 Surface and Pentacene OTFT Subjected to Atomic Hydrogen Annealing
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概要
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Effects of atomic hydrogen annealing (AHA) on the film properties and the electrical characteristics of pentacene organic thin-film transistors (OTFTs) are investigated. The surface energy of SiO2 surface and grain size of pentacene film were decreased with increasing AHA treatment time. For the treatment time of 300s, pentacene film showed the (00l) and (011) orientation and high carrier mobility in spite of small crystal grain.
著者
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MATSUO Naoto
Department of Materials Science & Chemistry, University of Hyogo
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HEYA Akira
Department of Materials Science & Chemistry, University of Hyogo
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