Nakashima Kenshiro | Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

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概要

関連著者

Sakai Joe
School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)
AKIYAMA Haruo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
Matsumura Hideki
School Of Materials Science Jaist (japan Advanced Institute Of Science And Technology)
Eryu Osamu
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
Nakashima Kenshiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
Masuda Atsushi
School of Material Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
Masuda Atsushi
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Tatsunokuchi, Nomi-gun, Ishikawa 923-1292, Japan
Sakai Joe
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Tatsunokuchi, Nomi-gun, Ishikawa 923-1292, Japan
Nakashima Kenshiro
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
Akiyama Haruo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
Matsumura Hideki
School of Material Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
Matsumura Hideki
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Tatsunokuchi, Nomi-gun, Ishikawa 923-1292, Japan

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著作論文

Correlation between O/Er Content Ratio and Photoluminescence Intensity of (Er, O)-Doped Hydrogenated Amorphous Si Thin Films Prepared by a Catalytic Chemical Vapor Deposition/Laser Ablation Hybrid Process

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