Uno Shigeyasu | Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

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著作論文

A Study of Pre-Breakdown in Ultra-Thin Silicon Dioxide Films Using Carrier Separation Measurement
Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current
Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current
Ellipsoidal Band Structure Effects on Maximum Ballistic Current in Silicon Nanowires
Amperometric Electrochemical Sensor Array for On-Chip Simultaneous Imaging: Circuit and Microelectrode Design Considerations
CMOS Cascode Source-Drain Follower for Monolithically Integrated Biosensor Array
Photosystem I Bio-Photosensor Integrated with Complementary Metal–Oxide–Semiconductor Source–Drain Follower on a Chip
On-chip Microelectrode Capacitance Measurement for Biosensing Applications
Preparation of Various Supramolecular Assemblies and Measurement of Photoresponse Behaviors
Analytical Compact Model of Ballistic Cylindrical Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor
Full Three-Dimensional Simulation of Ion-Sensitive Field-Effect Transistor Flatband Voltage Shifts Due to DNA Immobilization and Hybridization
Complementary Metal–Oxide–Semiconductor Ion-Sensitive Field-Effect Transistor Sensor Array with Silicon Nitride Film Formed by Catalytic Chemical Vapor Deposition as an Ion-Sensitive Membrane
Electron–Modulated-Acoustic-Phonon Interactions in a Coated Silicon Nanowire
Analytical Description of Intravalley Acoustic Phonon Limited Electron Mobility in Ultrathin Si Plate Incorporating Phonon Modulation due to Plate Interfaces
Analytic Circuit Model of Ballistic Nanowire Metal--Oxide--Semiconductor Field-Effect Transistor for Transient Analysis
Three-Dimensional Simulation of DNA Sensing by Ion-Sensitive Field-Effect Transistor: Optimization of DNA Position and Orientation
Three-Dimensional Simulation of DNA Sensing by Ion-Sensitive Field-Effect Transistor : Optimization of DNA Position and Orientation (Special Issue : Solid State Devices and Materials)
Analytic Circuit Model of Ballistic Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor for Transient Analysis (Special Issue : Solid State Devices and Materials)
Impact of Isotope Doping on Phonon Thermal Transport in Silicon Nanowires
Analytical Description of Inversion-Layer Quantum Effects Using the Density Gradient Model and Singular Perturbation Theory

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