Ellipsoidal Band Structure Effects on Maximum Ballistic Current in Silicon Nanowires
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概要
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We have calculated the maximum ballistic current density in circular-shaped silicon nanowires (SiNWs) to investigate the validity and limitation of an isotropic in-plane effective-mass approximation, which is often used for analyzing circular-shaped SiNW transistors. We compare the exact elliptic model with three types of isotropic approximations, based on arithmetic, harmonic, or geometric means. The ground subband level is found to be well approximated in the harmonic mean model. For the maximum current density, all the models give the exact value in the quantum limit at smaller radius. The geometric mean model approaches the exact elliptic model for larger radius. In an intermediate region, the harmonic mean model gives the smallest error compared to the other isotropic models.
- 2011-04-25
著者
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Uno Shigeyasu
Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Uno Shigeyasu
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Mori Nobuya
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Minari Hideki
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Hattori Junichi
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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