Impact of Attractive Ion in Undoped Channel on Characteristics of Nanoscale Multigate Field Effect Transistors: A Three-Dimensional Nonequilibrium Green's Function Study
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概要
- 論文の詳細を見る
A rigorous simulation study of the impact of a single attractive ion in undoped channel multigate field-effect transistors is presented using a new three-dimensional nonequilibrium Green's function technique. A single donor induces threshold voltage shift, and its impact is most significant when the donor is located at the top of the potential barrier. On the other hand, on-current is not affected so much because of the electrostatic screening by the electron bound around the positively charged ion. To reduce the intrinsic device parameter fluctuation, a gate-all-around structure has better robustness than the double gate structure.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-04-25
著者
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Mori Nobuya
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kamakura Yoshinari
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Yoshinari Kamakura
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Nobuya Mori
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kenji Taniguchi
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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