Impact of Interface Roughness on Threshold-Voltage Variation in Ultrasmall Gate-All-Around and Double-Gate Field-Effect Transistors

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概要

• 論文の詳細を見る

• Effects of interface roughness on the threshold-voltage variation of nanometer-size gate-all-around (GAA) and double-gate (DG) metal–oxide–semiconductor field-effect transistors (MOSFETs) are investigated using three-dimensional non-equilibrium Green's function formalism. It is found that DG MOSFETs have better robustness to the interface roughness compared to GAA MOSFETs. This is attributed to the fact that the GAA structure has additional quantum conferment along the gate-width direction of the DG structure. From numerical simulations, a simple analytical formula is derived, which describes the threshold-voltage variation in terms of the subband energy change and reduction in the transmission function.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-04-25

著者

• Mori Nobuya

  Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Minari Hideki

  Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

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