Theory of Resonant Tunneling through a Donor State

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概要

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• We present a theoretical model for electron tunneling through a single Si-donor state in a resonant tunneling diode with a Si \delta-doped layer in the central plane of the quantum well, under tilted magnetic field \mbi{B}. The tunneling current is calculated with a transfer Hamiltonian method by assuming that the current is limited by the emitter barrier. Through a variational calculation of the donor state, we show that the component of \mbi{B} parallel to the direction of current, B_{\|}, provides us with a means of compressing the donor wavefunction in the quantum-well plane. We also show that by measuring the current as a function of the perpendicular component B_{\bot} one can probe how the magneto-compression induced by B_{\|} affects the spatial form of the donor wavefunction. We compare the theoretical results with the experiment.

• 2012-02-25

著者

• EAVES Laurence

  School of Physics and Astronomy, University of Nottingham

• Patane Amalia

  School Of Physics And Astronomy University Of Nottingham

• Mori Nobuya

  Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Eaves Laurence

  School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom

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