Hole Transport Mechanism in Silicon and Germanium Nanowire Field Effect Transistors

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概要

• 論文の詳細を見る

• Atomistic hole transport simulation based on nonequilibrium Green's function method and tight-binding approximation has been performed for silicon (Si) and germanium (Ge) p-type nanowire (NW) field-effect transistors (FETs) with the diameter ranging from 1.6 to 3 nm. Simulation results show that the drain current density increases with increasing NW diameter and the difference in the drain current between Si and Ge NW FETs becomes smaller with decreasing NW diameter.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-04-25

著者

• Mori Nobuya

  Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Minari Hideki

  Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Nobuya Mori

  Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan

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• Impact of Interface Roughness on Threshold-Voltage Variation in Ultrasmall Gate-All-Around and Double-Gate Field-Effect Transistors
• Impact of Attractive Ion in Undoped Channel on Characteristics of Nanoscale Multigate Field Effect Transistors: A Three-Dimensional Nonequilibrium Green's Function Study
• Hole Transport Mechanism in Silicon and Germanium Nanowire Field Effect Transistors

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