Mori Nobuya | Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
スポンサーリンク
概要
- Mori Nobuyaの詳細を見る
- 同名の論文著者
- Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japanの論文著者
関連著者
-
Mori Nobuya
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
Minari Hideki
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
Ando Tsuneya
Department Of Physics Faculty Of Science University Of Tokyo
-
EAVES Laurence
School of Physics and Astronomy, University of Nottingham
-
Patane Amalia
School Of Physics And Astronomy University Of Nottingham
-
Uno Shigeyasu
Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
-
Uno Shigeyasu
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
-
Hattori Junichi
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
-
Kamakura Yoshinari
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
Yoshinari Kamakura
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
Nobuya Mori
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
-
Mori Nobuya
Division of Electrical, Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
-
Nobuya Mori
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
Kenji Taniguchi
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
Eaves Laurence
School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
-
Ando Tsuneya
Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 151-8551, Japan
著作論文
- Ellipsoidal Band Structure Effects on Maximum Ballistic Current in Silicon Nanowires
- Magnetophonon Resonance in Monolayer Graphene
- Theory of Resonant Tunneling through a Donor State
- Impact of Interface Roughness on Threshold-Voltage Variation in Ultrasmall Gate-All-Around and Double-Gate Field-Effect Transistors
- Impact of Attractive Ion in Undoped Channel on Characteristics of Nanoscale Multigate Field Effect Transistors: A Three-Dimensional Nonequilibrium Green's Function Study
- Hole Transport Mechanism in Silicon and Germanium Nanowire Field Effect Transistors