Kamakura Yoshinari | Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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概要
- Kamakura Yoshinariの詳細を見る
- 同名の論文著者
- Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japanの論文著者
関連著者
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Kamakura Yoshinari
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Taniguchi Kenji
Division Of Electrical Electronic And Information Engineering Osaka University
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TSUJI HIROSHI
Division of Radiation Medicine, National Institute of Radiological Sciences
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Zushi Tomofumi
Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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Yoshinari Kamakura
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kenji Taniguchi
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Taniguchi Kenji
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Tsuji Hiroshi
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Morifuji Masato
Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U
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Shimizu Yoshiyuki
Division Of Aging And Geriatric Dentistry Department Of Oral Function And Morphology Tohoku Universi
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Ohdomari Iwao
Faculty Of Science And Engineering Waseda University
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Shimizu Yoshiteru
Advanced LCD Technologies Development Center Co., Ltd., 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Miyano Soichiro
Advanced LCD Technologies Development Center Co., Ltd., 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Mori Nobuya
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Ohdomari Iwao
Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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Watanabe Takanobu
Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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Iwao Ohdomari
Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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Watanabe Takanobu
Faculty of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan
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Takanobu Watanabe
Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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Himukashi Takashi
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Nobuya Mori
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Nakano Shinsuke
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kuzuoka Tsuyoshi
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kishida Yuji
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kirihara Masaharu
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Shimizu Yoshiyuki
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Morifuji Masato
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
著作論文
- Molecular Dynamics Simulation on Longitudinal Optical Phonon Mode Decay and Heat Transport in a Silicon Nano-Structure Covered with Oxide Films
- Phenomenological Model for Stress and Relaxation Processes of Resistance Drift in Magnetic Tunnel Junctions
- Characteristics of Hot Hole Injection, Trapping, and Detrapping in Gate Oxide of Polycrystalline Silicon Thin-Film Transistors
- Impact of Attractive Ion in Undoped Channel on Characteristics of Nanoscale Multigate Field Effect Transistors: A Three-Dimensional Nonequilibrium Green's Function Study
- Molecular Dynamics Simulation of Heat Transport in Silicon Nano-structures Covered with Oxide Films
- Surface-Potential-Based Drain Current Model for Polycrystalline Silicon Thin-Film Transistors