Electron–Modulated-Acoustic-Phonon Interactions in a Coated Silicon Nanowire
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概要
- 論文の詳細を見る
Modulated acoustic phonons and their interactions with electrons in a coated cylindrical silicon nanowire (SiNW) are investigated theoretically. The impact of acoustic phonons on the interactions is encapsulated in the form factor. The form factor for a SiO2-coated SiNW is larger than that calculated using bulk phonons while that for a HfO2-coated SiNW is smaller, when the coating shell thickness is sufficiently large. This result can be qualitatively explained by the relationship of acoustic impedance between the nanowire core and shell. The form factor reduction directly weakens the interactions, and thereby provides higher electron mobility than that limited by bulk phonons.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-04-25
著者
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Mori Nobuya
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Kazuo Nakazato
Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Uno Shigeyasu
Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Shigeyasu Uno
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Hattori Junichi
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Nobuya Mori
Department of Electronic Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Junichi Hattori
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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