Analytical Compact Model of Ballistic Cylindrical Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor
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概要
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We propose a compact model of drain current in the ballistic mode in a cylindrical gate-all-around metal–oxide–semiconductor field-effect transistor (MOSFET). Wave functions of electrons in a channel are represented by a linear combination of wave functions in a cylindrical infinite quantum well. With these wave functions, the energy levels of electrons in a channel are analytically derived by approximately solving the Schrödinger equation. Drain current is obtained using a coupled equation of electron energy levels and a current equation for ballistic transport. Electron energy levels are compared with numerical simulation results. The electron energy levels obtained using our compact model demonstrate excellent agreement with numerical simulation results. With our compact model, surface potential, potential shape in the confinement plane, total charge density, electron energy level, and drain current are calculated self-consistently with only two fitting parameters and one transcendental equation.
- 2010-04-25
著者
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Nakazato Kazuo
Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ
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Uno Shigeyasu
Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Yoshinari Kamakura
Department of Electronic Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Numata Tatsuhiro
Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Furocho, Chikusa-ku, Nagoya 464-8603, Japan
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Nobuya Mori
Department of Electronic Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Nobuya Mori
Department of Electronic Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Nakazato Kazuo
Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Kazuo Nakazato
Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Furocho, Chikusa-ku, Nagoya 464-8603, Japan
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