Analytical Description of Intravalley Acoustic Phonon Limited Electron Mobility in Ultrathin Si Plate Incorporating Phonon Modulation due to Plate Interfaces
スポンサーリンク
概要
- 論文の詳細を見る
An analytical formula for the intravalley acoustic phonon limited electron mobility in an ultrathin silicon plate is presented. Phonon modulation due to mechanical mismatch at silicon surfaces is incorporated. The resulting mobility is less than that calculated without phonon modulation, because of a form factor increase at a small in-plane phonon wave vector. An analytical expression for the form factor is proposed and used to derive explicit formulae for the intravalley acoustic phonon scattering rate and related electron mobility. The analytical mobility formula has excellent accuracy for a plate thickness less than 6 nm for 4-fold valley electrons and a plate thickness less than 3 nm for 2-fold valley electrons.
- Japan Society of Applied Physicsの論文
- 2007-10-25
著者
-
Mori Nobuya
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Uno Shigeyasu
Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
-
Uno Shigeyasu
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
-
Mori Nobuya
Department of Electronic Engineering, Graduate School of Engineering, Osaka University, Osaka 565-0871, Japan
関連論文
- A Study of Pre-Breakdown in Ultra-Thin Silicon Dioxide Films Using Carrier Separation Measurement
- Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current
- Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current
- Conductance through Laterally Coupled Quantum Dots
- Effect of Quantum Confinement and Lattice Relaxation on Electronic States in GaAs/In_Ga_As/GaAs Quantum Dots ( Quantum Dot Structures)
- Ellipsoidal Band Structure Effects on Maximum Ballistic Current in Silicon Nanowires
- Amperometric Electrochemical Sensor Array for On-Chip Simultaneous Imaging: Circuit and Microelectrode Design Considerations
- Significant Reduction of Phonon Scattering Potential in 1D Si Quantum Dot Array Interconnected with Thin Oxide Layers
- CMOS Cascode Source-Drain Follower for Monolithically Integrated Biosensor Array
- Phonon Limited Electron Transport In SOI and Double-Gate MOSFETs Incorporating Realistic Acoustic Phonon Waves
- Photosystem I Bio-Photosensor Integrated with Complementary Metal–Oxide–Semiconductor Source–Drain Follower on a Chip
- Magnetophonon Resonance at High Electric and Magnetic Fields in Small n^+nn^+ GaAs Structures
- On-chip Microelectrode Capacitance Measurement for Biosensing Applications
- Effects of Electron-Phonon Interaction on Transport Characteristics of Sub-10-nm Bulk-MOSFETs
- Effects of Strained Layers on Zener Tunneling in Silicon Nanostructures
- Impact of strain on ballistic current in Si n-i-n structures
- Preparation of Various Supramolecular Assemblies and Measurement of Photoresponse Behaviors
- Analytical Compact Model of Ballistic Cylindrical Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor
- Full Three-Dimensional Simulation of Ion-Sensitive Field-Effect Transistor Flatband Voltage Shifts Due to DNA Immobilization and Hybridization
- Mode-Coupling Effects in Non-Equilibrium Green’s Function Device Simulation
- Reduction of Electron Decay Time Using Disordered Tunnel Barrier
- Complementary Metal–Oxide–Semiconductor Ion-Sensitive Field-Effect Transistor Sensor Array with Silicon Nitride Film Formed by Catalytic Chemical Vapor Deposition as an Ion-Sensitive Membrane
- Electron–Modulated-Acoustic-Phonon Interactions in a Coated Silicon Nanowire
- Effects of Strained Layers on Zener Tunneling in Silicon Nanostructures
- Impact of Strain on Ballistic Current in Si n–i–n Structures
- Analytical Description of Intravalley Acoustic Phonon Limited Electron Mobility in Ultrathin Si Plate Incorporating Phonon Modulation due to Plate Interfaces
- Analytic Circuit Model of Ballistic Nanowire Metal--Oxide--Semiconductor Field-Effect Transistor for Transient Analysis
- Three-Dimensional Simulation of DNA Sensing by Ion-Sensitive Field-Effect Transistor: Optimization of DNA Position and Orientation
- Three-Dimensional Simulation of DNA Sensing by Ion-Sensitive Field-Effect Transistor : Optimization of DNA Position and Orientation (Special Issue : Solid State Devices and Materials)
- Analytic Circuit Model of Ballistic Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor for Transient Analysis (Special Issue : Solid State Devices and Materials)
- Impact of Isotope Doping on Phonon Thermal Transport in Silicon Nanowires
- Analytical Description of Inversion-Layer Quantum Effects Using the Density Gradient Model and Singular Perturbation Theory