Reduction of Electron Decay Time Using Disordered Tunnel Barrier
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概要
- 論文の詳細を見る
The effects of ionized impurity in a tunnel barrier on electron tunneling are studied by performing time-resolved photoluminescence experiments using GaAs{\slash}AlGaAs asymmetric multiquantum wells (AMQWs) with a $\delta$-doping layer. The photoluminescence decay time of two-dimensional electron gas in GaAs{\slash}AlGaAs AMQWs was measured and the results are compared with those of semiclassical Monte Carlo simulation.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-30
著者
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Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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Mori Nobuya
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Park Jae-hyun
Department Of Chemistry College Of Natural Sciences Seoul National University
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Park Jae-Hyun
Department of Electronic Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Senzaki Shinji
Department of Electronic Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Hamaguchi Chihiro
Department of Electronic Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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