Some Properties of Silica Film Made by RF Glow Discharge Sputtering

元データ 1970-08-05 社団法人応用物理学会

概要

Electrical and optical properties of silica films obtained by RF sputtering both with and without oxygen ambient have been investigated. The resistivity of a typical film without oxygen ambient is found to be about 2×10^<16>Ωcm at room temperature and the activation energy is estimated to be 1.6eV in the temperature range from 200℃ to 400℃. Small quantity of oxygen gas results in an appreciable reduction of deposition rate. With increasing the oxygen partial pressure, the values of ε' and tan δ are found to increase and the absorption peak near 9.3μ shifts to longer wave lengths. These results are considered to be explained in terms of a change in film composition caused by oxygen ambient.

著者

Hamaguchi Chihiro Department Of Electronics Faculty Of Engineering Osaka University
Hamaguchi Chihiro Deparimsnt Of Elecironics Facully Of Engineering Osaka University
Nakai Junkichi Deparimsnt Of Elecironics Facully Of Engineering Osaka University
Matsuzawa Akio Japan Vacuum Engineering Co. Ltd.
Kobayashi Takao Department Of Bioregulatory Function Graduate School Of Medicine The University Of Tokyo
Fujioka Toshiaki Japan Vacuum Engineering Co. Ltd.
KOZUMA Taisaku Department of Electronics, Faculty of Engineering, Osaka University
Kozuma Taisaku Department Of Electronics Faculty Of Engineering Osaka University:(present Address) Hitachi Ltd. Nak
Kobayashi Takao Department Of Electronics Faculty Of Engineering Osaka University:(present Address) Sony Corporation
NAKAI Junkichi Department of Electronics, Faculty of Engineering, Osaka University
HAMAGUCHI Chihiro Department of Electronics, Faculty of Engineering, Osaka University

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