Some Properties of Silica Film Made by RF Glow Discharge Sputtering
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概要
- 論文の詳細を見る
Electrical and optical properties of silica films obtained by RF sputtering both with and without oxygen ambient have been investigated. The resistivity of a typical film without oxygen ambient is found to be about 2×10^<16>Ωcm at room temperature and the activation energy is estimated to be 1.6eV in the temperature range from 200℃ to 400℃. Small quantity of oxygen gas results in an appreciable reduction of deposition rate. With increasing the oxygen partial pressure, the values of ε' and tan δ are found to increase and the absorption peak near 9.3μ shifts to longer wave lengths. These results are considered to be explained in terms of a change in film composition caused by oxygen ambient.
- 社団法人応用物理学会の論文
- 1970-08-05
著者
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Hamaguchi Chihiro
Department Of Electronics Faculty Of Engineering Osaka University
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Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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Nakai Junkichi
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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Matsuzawa Akio
Japan Vacuum Engineering Co. Ltd.
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Kobayashi Takao
Department Of Bioregulatory Function Graduate School Of Medicine The University Of Tokyo
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Fujioka Toshiaki
Japan Vacuum Engineering Co. Ltd.
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KOZUMA Taisaku
Department of Electronics, Faculty of Engineering, Osaka University
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Kozuma Taisaku
Department Of Electronics Faculty Of Engineering Osaka University:(present Address) Hitachi Ltd. Nak
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Kobayashi Takao
Department Of Electronics Faculty Of Engineering Osaka University:(present Address) Sony Corporation
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NAKAI Junkichi
Department of Electronics, Faculty of Engineering, Osaka University
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HAMAGUCHI Chihiro
Department of Electronics, Faculty of Engineering, Osaka University
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