Resonant Brillouin Scattering in CdS (Selected Topics in Semiconductor Physics<特集>) -- (Light Scattering)
スポンサーリンク
概要
- 論文の詳細を見る
Analysis is made on the resonant enhancement of the Brillouin scattering cross section in CdS. The scattering cross sections are calculated for the scattering by piezoelectrically inactive fast TA phonons (T1 mode) and active slow TA phonons (T2 mode) by taking into account the scattering of the virtual intermediate states associated with the p-like A, B, and C-valence bands. The dominant contribution was found to come from the scattering processes of the A-state to the B-state by deformation potential C_5 for the T1 mode and of the B-state to the A-state by deformation potential C_6 for the T2 mode in the present experimental configuration. A theoretical calculation by taking into account the exciton effect shows an excellent agreement with experimental data.
- 理論物理学刊行会の論文
- 1975-11-29
著者
-
Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
-
Hamaguchi Chihiro
Department Of Electronics Osaka University
-
Ando Koushi
Department of Internal Medicine, Cardiology, Neurosurgery, and Radiology, Hamamatsu Red Cross Hospit
-
Ando Koushi
Department Of Electronics Osaka University
関連論文
- Influence of N_2O Oxynitridation on Interface Trap Generation in Surface-Channel p-Channel Metal Oxide Semiconductor Field Effect Transistors
- Influence of N_2O-Oxynitridation on Interface Trap Generation in Surface-Channel PMOSFETs
- Thickness Dependence of Furnace N_2O-Oxynitridation Effects on Breakdown of Thermal Oxides
- Temperature Dependence of Electron Mobility in InGaAs/InAlAs Heterostructures
- Hole Trapping and Detrappirug Characteristics Investigated by Substrate Hot-Hole Injection into Oxide of Metal-Oxide-Semiconduetor Structure
- Hot-Hole-Induced Interface State Generation in p-Channel MOSFETs with Thin Gate Oxide
- Evaluation of Spatial Distribution of Hole Traps Using Depleted Gate MOSFETs
- Analytical Device Model of SOI MOSFETs Including Self-Heating Effect
- Spatial Distribution of Trapped Holes in the Oxide of Metal Oxide Semiconductor Field-Effect Transistors after Uniform Hot-Hole Injection
- Existence of Double-Charged Oxide Traps in Submicron MOSFET's (SOLID STATE DEVICES AND MATERIALS 1)
- Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
- Hot Electron Drift Velocity in AlGaAs/GaAs Heterojunctions : Electrical Properties of Condensed Matter
- Monte Carlo Study of Hot Electron Transport in Quantum Wells : Electrical Properties of Condensed Matter
- Crossover of Direct and Indirect Transitions in (GaAs)_m/(AlAs)_5 Superlattices (m=1-11)
- Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition
- Nonlinear Dynamics of Periodic Electric-Field Domains in Quantum Well Infrared Photodetectors
- Theoretical Study of Recharging Instability in Quantum Well Infrared Photodetectors
- Recharging Instability and Periodic Domain Structures in Multiple Quantum Well Infrared Photodetectors
- Quasi-Static Analysis of Resonant Brillouin Scattering in ZnSe, ZnTe and CdS
- Scalability of Gate/N^- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime
- Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm
- Shubnikov de Haas Effect and Energy Band Structure of GaSb
- A Compact Plastic Package with High RF Isolation by Subsidiary Inner Ground Leads (Special Issue on High-Frequency/speed Devices in the 21st Century)
- High Field Transport of Hot Electrons in Strained Si/SiGe Heterostructure
- Temperature Dependence of Electron Mobility in Si Inversion Layers
- Magnetophonon Resonance in In_xCa_As (x=0.53) : Physical Acoustics
- Temperature Dependence of the Effective Masses in III-V Semiconductors
- Magnetic Field Modulation Method for Measurements of Magnetophonon Effect
- Simulation of Dopant Redistribution During Gate Oxidation Including Transient-Enhanced Diffusion Caused by Implantation Damage
- Temperature Dependence of Raman Spectra in Si-doped GaAs/AlAs Multiple Quantum Wells
- Experimental Observation of Intersubband Excitations in Si-Doped GaAs/AlAs Multiple Quantum Wells
- Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
- Hot Electron Effect in Short n^+nn^ GaAs
- Electroreflectance Study of Cd_xHg_Te
- Optical Constants of HgTe and HgSe
- Electroreflectance Measurements on Cd_xHg_Te
- High-Sensitivity SOI MOS Photodetector with Self-Amplification
- High Sensitivity Photodetector with Self-Amplification Capability
- Wannier-Stark Localization in Superlattices
- Brillouin Scattering Studies of Off-Axis Acoustoelectric Domains in CdS
- Photoluminescence Measurement in GaAs with High Spatial Resolution
- Effect of Uniaxial Stress on Photoluminescence spectrum of Si-Implanted GaAs Slice
- Brillouin Scattering in GaP
- Addendum to Brillouin Scattering in GaSe
- Velocity and Attenuation of Injected Sound Waves into ZnSe at Room Temperature
- Brillouin-Scattering Study on Mixing Effects of Acoustic Waves in Photoconductive CdS
- Resonant Brillouin Scattering by Acoustoelectrically Amplified Phonons in CdS
- Magnetoacoustoelectric Instability in Epitaxial GaAs
- Harmonic Conversion of Acoustoelectrically Amplified Phonons in Photoconductive CdS Revealed by Brillouin Scattering
- Correlations of Acoustoelectric Instabilities with Inhomogeneities in CdS Measured by Optical Probe
- Magneto-Impurity Resonance in n-Type Germanium
- Magnetophonon Resonance in n-Type Germanium at Low Temperatures
- Magnetophonon Effect in p-InSb
- Magnetophonon Resonance and Fourier Analysis in n-GaAs
- Phonon-Assisted Tunneling in Metal-Oxide-Pb_Sn_xTe Junctions
- Magnetophonon Resonance of Hot Electrons in n-InSb at 77K
- Electroreflectance for the Λ_3-Λ_1 Transitions in HgSe
- Electrical and Optical Properties of GaSe
- Some Optical Properties of Layer-Type Semiconductor GaTe
- Resonant Brillouin Scattering in Opaque and Transparent Regions of CdS
- Magnetophonon Effect and Energy Band Parameters of InP
- Magnetophonon Resonance in n-InP : Physical Acoustics
- Study of a Length Coefficient for an Extended Drift-Diffusion Model for Metal-Oxide-Semiconductor (MOS) Device Simulation
- Impact Ionization Model Using Average Energy and Average Square Energy of Distribution Function
- Novel Impact Ionization Model for Device Simulation Using Generalized Moment Conservation Equations
- Nonlocal Impact Ionization Model and Its Application to Substrate Current Simulation of n-MOSFET's
- The Role of the Effective Mass in the Hot-Electron Magnetophonon Resonance in n-Type Germanium
- Effect of Electric Field on the Magnetophonon Oscillations in n-InSb and n-GaAs
- Temperature Dependence of the Band-Edge Effective Mass in n-InAs Deduced from Magnetophonon Resonance
- Measurements of Intervalley Phonons in n-Si by Magnetphonon Resonance : Physical Acoustics
- Magnetophonon Resonance in n-Type Germanium
- Measurements of Band-Edge and Intervalley Phonons in Semiconductors by Magnetophonon Resonance : Physical Acoustics
- Conductance through Laterally Coupled Quantum Dots
- Effect of Quantum Confinement and Lattice Relaxation on Electronic States in GaAs/In_Ga_As/GaAs Quantum Dots ( Quantum Dot Structures)
- Electroabsorption and Electroluminescence of GaSe
- Electroreflectance of GaSe. II. : 3.5-4.1 eV Region
- Electroreflectance of GaSe. I. : Around 3.4 eV
- Electric Field Effect on the Imaginary Part of the Dielectric Function in Highly Anisotropic Crystals
- Electrical Conduction and Switching in Amorphous Semiconductors
- Current Saturation Associated with Ultrasonic Amplification in CdS Crystals
- Self-consistent Determination of the Confinement Potential in Various Etched Quantum Wire Structures
- A Hole Trap Center Related to the 2.361 eV Bound Exciton Emission in ZnTe Single Crystals
- Device Physics and Modeling of Multiple Quantum Well Infrared Photodetectors
- Direct Observation of Gaussian-Type Energy Distribution for Hot Electrons in Silicon
- Strain Evaluation at Si/Si0_2 Interface Using the Electroreflectance Method
- Theoretical Study of Minority Carrier Lifetimes due to Auger Recombination in n-type Silicon
- Resonant Brillouin Scattering in CdS (Selected Topics in Semiconductor Physics) -- (Light Scattering)
- Study of Resonant Brillouin Scattering in ZnSe by Injected Acoustic Waves
- Effect of Lifetime Broadening on Resonant Brillouin Scattering in ZnTe and ZnSe
- Resonant Brillouin Scattering by LA Phonons in CdS
- A Study of Magnetophonon Effect in n-InSb Using Field Modulation Technique
- Degradation Mechanisms of Thin Film SIMOX SOI-MOSFET Characteristics : Optical and Electrical Evaluation (Special Issue on Quarter Micron Si Device and Process Technologies)
- Hot-Electron Magnetophonon Effect in n-InSb at 77 K Investigated by Magnetic Field Modulation Technique
- Injection of Acoustic Domains into Semiconductors
- Electroabsorption of GaS around the Indirect Edge
- Physical Models for Deep Submicron Device Simulation
- Magnetophonon Resonance at High Electric and Magnetic Fields in Small n^+nn^+ GaAs Structures
- A Self-Consistent Monte Carlo Simulation for Two-Dimensional Electron Transport in MOS Inversion Layer
- Normal Electric Field Dependence of Electron Mobility in MOS Inversion Layer
- Fine structures in Optical Absorption Spectra of MnO