Magnetophonon Resonance in n-InP : Physical Acoustics
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1984-09-20
著者
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Ozeki Masashi
Fujitsu Laboratories Ltd.
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Ozeki Masashi
Fujitsu Laboratories
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Hamaguchi C
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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Komeno J
Fujitsu Laboratories Ltd.
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NAKASHIMA Takashi
Department of Electronics,Osaka University
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KOMENO Jyunji
Fujitsu Laboratories Ltd.
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Ozeki M
Univ. Miyazaki
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Nakashima Takehiro
Faculty Of Engineering Nagoya Unibersity
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Nakashima Takashi
Department Of Anatomy Faculty Of Medicine Kyushu University:department Of Anatomy Kyushu Dental Coll
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- Hole Trapping and Detrappirug Characteristics Investigated by Substrate Hot-Hole Injection into Oxide of Metal-Oxide-Semiconduetor Structure
- Hot-Hole-Induced Interface State Generation in p-Channel MOSFETs with Thin Gate Oxide
- Evaluation of Spatial Distribution of Hole Traps Using Depleted Gate MOSFETs
- Analytical Device Model of SOI MOSFETs Including Self-Heating Effect
- Spatial Distribution of Trapped Holes in the Oxide of Metal Oxide Semiconductor Field-Effect Transistors after Uniform Hot-Hole Injection
- Existence of Double-Charged Oxide Traps in Submicron MOSFET's (SOLID STATE DEVICES AND MATERIALS 1)
- Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
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- Monte Carlo Study of Hot Electron Transport in Quantum Wells : Electrical Properties of Condensed Matter
- Crossover of Direct and Indirect Transitions in (GaAs)_m/(AlAs)_5 Superlattices (m=1-11)
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- Nonlinear Dynamics of Periodic Electric-Field Domains in Quantum Well Infrared Photodetectors
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- Photoluminescence Excitation Spectroscopy of In_Ga_,As/InP Multi-Quantum-Well Heterostructures
- Shallow and Deep Donor Levels in S-Doped Ga_In_P Grown by Chloride VPE
- Two-Dimensional Electron Gas at GaAs/Ga_In_P Heterointerface Grown by Chloride Vapor-Phase Epitaxy
- Growth of InGaAsP Quaternary by Chloride VPE
- Reflection High-Energy Electron Diffraction of Heteroepitaxy in Chemical Vapor Deposition Reactor : Atomic-Layer Epitaxy of GaAs, AlAs and GaP on Si
- Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy
- Control of GaAs on Si Interface Using Atomic Layer Epitaxy
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