Shubnikov de Haas Effect and Energy Band Structure of GaSb
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概要
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Shubnikov de Haas oscillations in the longitudinal magnetoresistance weremeasured in Te doped n-GaSb in the temperature range from 4.2 to 20 K inmagnetic fields up to 8 Tesla. From the analysis of oscillation amplitude as afunction of temperature the conduction band edge mass and Dingle temperaturewere estimated to be 0.041m and 7.5 K, respectively. Measurements at magneticfields up to 30 Tes[a at 4.2 K reveal the spin-splitting, from which the effectiveg factor of GaSb was estimated to be go -7.68.j.0.1. The energy band for GaSbwas calculated throughout the entire Brillouin zone and the analysis of theenergy band parameters for GaSb was carried out using the k'p perturbationmethod. These results are found to be consistent with the experimental values,such as the effective mass and the effective g factor determined from Shubnikovde Haas measurements.
- 社団法人日本物理学会の論文
- 1985-01-15
著者
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Hazama H
Niigata Univ. Niigata Jpn
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Hazama H
Toshiba Corp. Kawasaki‐shi Jpn
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Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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HAZAMA Hiroaki
Department of Electronics,Osaka University
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ITOH Yasuo
Department of Electronics,Osaka University
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Itoh Yasuo
Department Of Electronics Osaka University
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Itoh Yasuo
Department Of Electronic Engineering Faculty Of Engineering Osaka University:vlsi Research Center To
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Hazama Hiroaki
Department of Electronic Engineering,Faculty of Engineering,Osaka University:VLSI Research Center,Toshiba Corporation
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ITOH Yasuo
Department of Biological Sciences, Faculty of Science, Shinshu University
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ITOH Yasuo
Department of Agricultural Chemistry, Tokyo Noko University
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