Effect of Electric Field on the Magnetophonon Oscillations in n-InSb and n-GaAs
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概要
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The effect of pulsed electric fields on the magnetophonon structure in thetransverse magnetoresistance of n-InSb and n-GaAs at 77 K has been investigatedusing a magnetic field modulation technique. The damping factor which representsan exponential decay of the oscillation has been deduced for the first time as afunction of the total electric field, sum of the applied and Hall field. The dampingfactor increases with increasing the electric field beyond the threshold value,100 V/cm for n-InSb and 500 V/cm for n-GaAs. The increase was; found to bewell explained in terms of the irttra-collisional field effect proposcsd by Barker.The shift of the extremum positions at high electric field was reexa'mined experi-mentally and compared with the existing models. Non-parabolicity c>f the conduc-tion band explains the shift in n-InSb but fails in n-GaAs.
- 社団法人日本物理学会の論文
- 1981-07-15
著者
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Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hamaguchi Chihiro
Department Of Electronics Faculty Of Engineering Osaka University
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Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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SHIMOMAE Koichi
Department of Electronics,Faculty of Engineering,Osaka University
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TAKAYAMA Junji
Department of Electronics,Faculty of Engineering,Osaka University
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Takayama Junji
Department Of Electronics Faculty Of Engineering Osaka University:fukushima Branch Of Ntt
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Shimomae Koichi
Department Of Electronics Faculty Of Engineering Osaka University
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