Temperature Dependence of the Effective Masses in III-V Semiconductors
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概要
- 論文の詳細を見る
Effective masses in GaAs, InSb and InP are determined in the temperature rangefrom 77 to 300 K from the magnetophonon resonance experiments. An expression forthe conduction band effective mass valid for zinc blende crystals is derived by the k.pperturbation theory and by taking into account the higher lying bands, where twomomentum matrix elements P and P. appear. The momentum matrix elements areestimated from the parameters determined from the energy band calculations.Temperature dependence of the effective mass is calculated using the expression deriv-ed in this paper and dilational change of the energy gaps which are estimated from thepseudopotential method and the experimental data of the linear thermal expansioncoefficient. Reasonable agreement is obtained for GaAs but agreement is not so goodin InSb and Ink.
- 社団法人日本物理学会の論文
- 1986-04-15
著者
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Hazama H
Niigata Univ. Niigata Jpn
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Hazama H
Toshiba Corp. Kawasaki‐shi Jpn
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Hamaguchi C
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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HAZAMA Hiroaki
Department of Electronics,Osaka University
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SUGIMASA Tetsuya
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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IMACHI Tadasi
Department of Electronic Engineering,Faculty of Engineering,Osaka University
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Imachi Tadashi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Sugimasa Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hazama Hiroaki
Department of Electronic Engineering,Faculty of Engineering,Osaka University:VLSI Research Center,Toshiba Corporation
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