Effect of Lifetime Broadening on Resonant Brillouin Scattering in ZnTe and ZnSe

概要

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Resonant Brillouin scattering by fast-TA phonons in ZnTe and ZnSe has been studied by using an acoustic domain injection method. Two kinds of ZnTe and ZnSe crystals have been used to investigate some effects of the crystalline imperfections on the dispersion of the Brillouin scattering cross sections. The measurements have been made at room temperature and 77 K. It has been found that the Brillouin scattering cross sections are affected strongly by the damping of the intermediate electronic states and that the damping energy does not depend on the temperatures but on the kinds of the crystals. The damping energy of the high-quality ZnTe (ZnSe) determined from resonant Brillouin scattering is Γ=26 meV (44 meV) at 77 K, which is very large compared with the value of Γ【_|〜】 meV (3 meV) obtained from reflectance spectrum. The result are interpreted in terms that the damping is caused mainly by an interaction of the intermediate electronic states with the high-intensity acoustic phonon domains and the crystalline imperfections.
社団法人応用物理学会の論文
1979-03-05