Resonant Brillouin Scattering in Zn_xCd_<1-x>Te Solid Solutions
スポンサーリンク
概要
- 論文の詳細を見る
Resonant Brillouin scattering in Zn,Cd.-.Te solid solutions has first beenstudied by using injected acoustic domains. The dispersion curves have showngood agreement with the resonant light scattering theory when broadening effectis taken into account.
- 社団法人日本物理学会の論文
- 1978-01-15
著者
-
Adachi Sadao
Department Of Electronic Engineering Gunma University
-
Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
-
Hamaguchi Chihiro
Department Of Electronics Osaka University
関連論文
- Mesoscopic Phenomena in Microstructures of IV-VI Epilayers
- Direct Observation of Exciton Magnetic Polaron in CdMnTe from Polarized Magneto-Photoluminescence
- Influence of N_2O Oxynitridation on Interface Trap Generation in Surface-Channel p-Channel Metal Oxide Semiconductor Field Effect Transistors
- Influence of N_2O-Oxynitridation on Interface Trap Generation in Surface-Channel PMOSFETs
- Thickness Dependence of Furnace N_2O-Oxynitridation Effects on Breakdown of Thermal Oxides
- Temperature Dependence of Electron Mobility in InGaAs/InAlAs Heterostructures
- Hole Trapping and Detrappirug Characteristics Investigated by Substrate Hot-Hole Injection into Oxide of Metal-Oxide-Semiconduetor Structure
- Hot-Hole-Induced Interface State Generation in p-Channel MOSFETs with Thin Gate Oxide
- Evaluation of Spatial Distribution of Hole Traps Using Depleted Gate MOSFETs
- Analytical Device Model of SOI MOSFETs Including Self-Heating Effect
- Spatial Distribution of Trapped Holes in the Oxide of Metal Oxide Semiconductor Field-Effect Transistors after Uniform Hot-Hole Injection
- Existence of Double-Charged Oxide Traps in Submicron MOSFET's (SOLID STATE DEVICES AND MATERIALS 1)
- Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
- Hot Electron Drift Velocity in AlGaAs/GaAs Heterojunctions : Electrical Properties of Condensed Matter
- Monte Carlo Study of Hot Electron Transport in Quantum Wells : Electrical Properties of Condensed Matter
- Crossover of Direct and Indirect Transitions in (GaAs)_m/(AlAs)_5 Superlattices (m=1-11)
- Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition
- Nonlinear Dynamics of Periodic Electric-Field Domains in Quantum Well Infrared Photodetectors
- Theoretical Study of Recharging Instability in Quantum Well Infrared Photodetectors
- Recharging Instability and Periodic Domain Structures in Multiple Quantum Well Infrared Photodetectors
- Optical Properties of CuO Studied by Spectroscopic Ellipsometry
- Optical Properties of Cu_2O Studied by Spectroscopic Ellipsometry
- Numerical Studies on Parameters for Stable Adiabatic Inversion by Gaussian and Square Pulses
- Measurement of Dipole Matrix Element of Atomic Gd Transitions using Rabi Flopping
- Chemical Treatmemt Effect of Si(111) Surfaces in H_2SO_4 : H_2O_2 Solution
- NH_4OH-Treated Si(111) Surfaces Studied by Spectroscopic Ellipsometry and Atomic Force Microscopy
- Quasi-Static Analysis of Resonant Brillouin Scattering in ZnSe, ZnTe and CdS
- Scalability of Gate/N^- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime
- Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm
- Shubnikov de Haas Effect and Energy Band Structure of GaSb
- Evaluation of Multilayer Structure and Depth Profile by PAS Using a Transparent Transducer : Photoacoustic Spectroscopy
- Evaluation of Ion Implantation into Silicon Photoacoustic Spectroscopy using Transparent Transducer Method : Photoacoustic Spectroscopy
- A Compact Plastic Package with High RF Isolation by Subsidiary Inner Ground Leads (Special Issue on High-Frequency/speed Devices in the 21st Century)
- High Field Transport of Hot Electrons in Strained Si/SiGe Heterostructure
- Temperature Dependence of Electron Mobility in Si Inversion Layers
- Magnetophonon Resonance in In_xCa_As (x=0.53) : Physical Acoustics
- Temperature Dependence of the Effective Masses in III-V Semiconductors
- Magnetic Field Modulation Method for Measurements of Magnetophonon Effect
- Simulation of Dopant Redistribution During Gate Oxidation Including Transient-Enhanced Diffusion Caused by Implantation Damage
- Decomposition of Chlorofluorocarbon by Pulse High-Current Discharge and Fast Burning through Spark Discharge
- Decomposition of Low-Pressure Pollutant by Repeated Pulse Microwave Discharge
- Temperature Dependence of Raman Spectra in Si-doped GaAs/AlAs Multiple Quantum Wells
- Experimental Observation of Intersubband Excitations in Si-Doped GaAs/AlAs Multiple Quantum Wells
- Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
- Application of Pulse High-Energy Electron Beams for Decomposition of Chlorofluorocarbon in Atmospheric-Pressure Air
- Optical Constants of ZnSe_xTe_ Ternary Alloys
- Hot Electron Effect in Short n^+nn^ GaAs
- Electroreflectance Study of Cd_xHg_Te
- Optical Constants of HgTe and HgSe
- Electroreflectance Measurements on Cd_xHg_Te
- High Sensitivity Photodetector with Self-Amplification Capability
- Wannier-Stark Localization in Superlattices
- Optical Properties of Ion-Implanted Si layeres Studied by Spectroscopic Ellipsometry
- Brillouin Scattering Studies of Off-Axis Acoustoelectric Domains in CdS
- Photoluminescence Measurement in GaAs with High Spatial Resolution
- Effect of Uniaxial Stress on Photoluminescence spectrum of Si-Implanted GaAs Slice
- Brillouin Scattering in GaP
- Addendum to Brillouin Scattering in GaSe
- Velocity and Attenuation of Injected Sound Waves into ZnSe at Room Temperature
- Numerical Study on Acoustic Emission from Flow Past an Airfoil
- Spectroscopic Ellipsometry Study of (111) and (100)Si Surfaces Etched in Aqueous KOH Solution
- Chemical Treatment Effectson Si (111) Surfaces in Aqueous NaF Solution : Semiconductors
- Effect of Lifetime Broadening on Resonant Brillouin Scattering in ZnTe and ZnSe
- Resonant Brillouin Scattering by LA Phonons in CdS
- Optical Constants of Amorphous Ga_2Te_3 and In_2Te_3
- Electroreflectance Study of (AlxGa1-x)0.5In0.5P Alloys
- HF-Treated (111), (110) and (100)Si Surfaces Studied by Spectroscopic Ellipsometry
- Spectroscopic Ellipsometry Study of Si Surfaces Modified by Low-Energy Ar^+-Ion Irradiation
- Refractive-Index Dispersion in Zn_Cd_xTe Ternary Alloys
- Optical Constants of Zn_Cd_xTe Ternary Alloys : Experiment and Modeling
- Optical Constants of Cubic ZnS
- Optical Constants of Amorphous Ga_2Se_3
- Optical Properties of SnTe
- Optical Properties of PbTe
- Chemical Etching Characteristics of (100)GaAs in Kusatsu Spa Water
- Numerical Derivative Analysis of the Pseudodielectric Function of CdTe
- Resonant Forbidden Brillouin Scattering in CdS
- Spectroscopic-Ellipsometry and Thermoreflectance Spectra of Sputter-Deposited InSb Films
- Optical Properties of (Al_xGa_)_In_P Quaternary Alloys
- Chemical Treatment Effects on Si Surfaces in SC2 Solutions Studied by Spectroscopic Ellipsometry
- Study of GaAs(001) Surfaces Treated in Aqueous HCl Solutions
- Porous Silicon Formation by Photoetching in HF/H2O2 Solution Using Incoherent Light Source
- Light Emission from Porous Silicon Photoetched in Aqueous Alkali Salt Solutions
- Analysis of Optical Constants for Sputter-Deposited InSb Films Based on the Interband-Transition Model
- Resonant Brillouin Scattering in Zn_xCd_Te Solid Solutions
- Resonant Brillouin Scattering in CdS by Piezoelectrically Inactive TA Phonon Domains
- Resonant Brillouin Scattering in ZnTe
- Resonant Brillouin Scattering in GaSe and GaS
- Optical Constants of In_Ga_xSb Ternary Alloys : Experiment and Modeling
- Photoreflectance Spectroscopy of ZnO for Ordinary and Extraordinary Rays
- Annealing Effect on Copper Impurity Emission in ZnSe
- Phosphorus-Ion-Implantation into ZnSe Single Crystals
- Chemical Treatment Effects of Si Surfaces in NH_4OH:H_2O_2:H_2O Solutions Studied by Spectroscopic Ellipsometry
- Optical Dispersion Relations in Amorphous Semiconductors: Model-Dielectric-Function Approach to Amorphous GaAs
- Energy Level Study of Phosphorus-Ion-Implanted ZnSe
- Optical Constants of ZnO
- Chemical Treatment Effect of Si(111) Surfaces in NH_4F Solution Studied by Spectroscopic Ellipsometry
- Chemical Etching of Thermally-Grown SiO_2 Films on SiC Studied by Spectroscopic Ellipsometry
- Optical Constants of 6H-SiC Single Crystals
- Anomalous Enhancement of Electron Paramagnetic Resonance Signal of Mn^ in N-Ion-Implanted CdS