Chemical Etching Characteristics of (100)GaAs in Kusatsu Spa Water
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概要
- 論文の詳細を見る
We have successfully demonstrated that a solution of Kusatsu Spa water (KSW)/H_2O_2 etches (100)GaAs wafers. This etchant system provides high-quality etched surfaces without any undesirable roughness or etch pits. The etching rate was found to be easily controlled by changing the etchant component proportions. The etchant system has reproducible etching rates and does not erode photoresist masks.
- 社団法人応用物理学会の論文
- 1991-06-15
著者
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Adachi Sadao
Department Of Electronic Engineering Gunma University
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Adachi S
Gunma Univ. Gunma Jpn
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Adachi S
Hiroshima Univ. Higashihiroshima Jpn
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