Chemical Treatment Effects on Si Surfaces in SC2 Solutions Studied by Spectroscopic Ellipsometry
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概要
- 論文の詳細を見る
Si surfaces chemically treated in HCl:H_2O_2:H_2O=X:1:6 [X=1 (SC2) and 0] at 80℃ have been studied using spectroscopic ellipsometry (SE). The SE data clearly indicate that both the X=1 and 0 solutions result in surface chemical oxidation. The chemical oxidation occurs immediately upon immersion of the samples in the solutions. The thickness of chemical oxide shows a saturated value of 〜9.5±1 (X=1) and 〜11.5±1Å (X=0) against immersion time t.
- 社団法人応用物理学会の論文
- 1994-01-01
著者
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Adachi Sadao
Department Of Electronic Engineering Gunma University
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Kobayashi Kazuyuki
Department Of Electronic Engineering Faculty Of Engineering Gunma University
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Susuki T
Department Of Electronic Engineering Faculty Of Engineering Gunma University
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SUSUKI Takahiro
Department of Electronic Engineering, Faculty of Engineering, Gunma University
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