Mesoscopic Phenomena in Microstructures of IV-VI Epilayers

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-08-30

著者

• Takano Yasushi

  Department Of Electrical And Electronic Engineering Toyohashi University Of Technology

• Adachi Seiji

  Central Research Laboratory Matsushita Electric Industrial Co. Ltd.

• Adachi Seiji

  Central Research Laboratories Matsushita Electric Industrial Co. Ltd.

• Papis Ewa

  Institute Of Electron Technology

• Dietl Tomasz

  Institute Of Physics Polish Academy Of Science:institute Of Theoretical Physics Warsaw University:er

• Dietl Tomasz

  Institute Of Physics And College Of Science Polish Acedemy Of Sciences Al

• Dietl Tomasz

  Institute Of Physics Polish Academy Of Sciences

• Adachi S

  Department Of Electronic Engineering Faculty Of Engineering Gunma University

• Adachi Sadao

  Department Of Electronic Engineering Gunma University

• Grabecki Grzegorz

  Himeji Institute Of Technology Faculty Of Science:institute Of Physics Polish Academy Of Sciences

• Takagi Yuji

  Information And Communications Research Center

• Piotrowska Anna

  Institute Of Electron Technology

• Takeyama S

  Matsushita Res. Inst. Tokyo Inc. Kawasaki Jpn

• TAKEYAMA Shojiro

  Himeji Institute of Technology, Faculty of Science

• ADACHI Satoru

  Himeji Institute of Technology, Faculty of Science

• TAKAGI Yoshihiro

  Himeji Institute of Technology, Faculty of Science

• KAMINSKA Eliana

  Institute of Electron Technology

• FRANK Norbert

  Institut fur Halbleiterphysik, Johannes Kepler Universitat Linz

• BAUER Gunther

  Institut fur Halbleiterphysik, Johannes Kepler Universitat Linz

• Bauer Gunther

  Institut Fur Halbleiterphysik Johannes Kepler Universitat Linz

• Frank Norbert

  Institut Fur Halbleiterphysik Johannes Kepler Universitat Linz

• Adachi S

  Gunma Univ. Gunma Jpn

• Takagi Yuji

  Information And Communications Research Center Matsushita Electric Industrial Co. Ltd.

• Adachi S

  Hiroshima Univ. Higashihiroshima Jpn

• Takagi Y

  Tokyo Inst. Technology Yokohama‐shi Jpn

• Takeyama S

  Himeji Inst. Technol. Hyogo Jpn

• Adachi Satoru

  Himeji Institute Of Technology Faculty Of Science

• Adachi Satoru

  Institute Of Laser Engineering Osaka University:(present Address)department Of Material Science Hime

• Takagi Yoshihiro

  Institute For Molecular Science:(present Address) Himeji Technical University Faculty Of Science

• Takagi Yoshihiro

  Himeji Institute Of Technology Faculty Of Science

• Tagaki Yuji

  Information & Communications Research Center Matsushita Electric Industrial Co. Ltd.

• Takano Yoshinobu

  Advanced Technology Research Laboratories, Nippon Steel Corporation

関連論文

• Fabrication of Multilayer Structures and Ramp-Edge Josephson Junctions with (Hg,Re)Ba_2CaCu_2O_y Films
• (Hg, Re)Ba_2CaCu_2O_y [100]-Tilt Grain Boundary Josephson Junctions with High Characteristic Voltages
• Noise Properties of (Hg_Re_)Ba_2CaCu_2O_y Dc Superconducting Quantum Interference Device on (LaAlO_3)_-(SrAl_Ta_O_3)_ Substrates : Superconductors
• Mesoscopic Phenomena in Microstructures of IV-VI Epilayers
• Direct Observation of Exciton Magnetic Polaron in CdMnTe from Polarized Magneto-Photoluminescence
• Spin Polarization Dependent Far Infrared Absorption in Ga_Mn_xAs : Semiconductors
• Interplay between Carrier Localization and Magnetism in Diluted Magnetic and Ferromagnetic Semiconductors(Advances in Spintronics)
• Heteroepitaxial Growth of InAs on Misoriented GaAs(111)B Substrates by Molecular Beam Epitaxy
• Initial Growth Mechanism of Si on GaAs Studied by Reflection High-Energy Electron Diffraction Oscillations
• Growth Mechanism in Migration-Enhanced Epitaxy of AlAs on Misoriented GaAs(111)B Substrates
• An Optoelectronic Synaptic Connection Circuit with Variable Analog and Nonvolatile Weights (OPTICAL COMPUTING 1)
• Initial Growth Mechanism of GaAs on Si(110)
• Realization of Two-Dimensional Growth and Suppression of Threading Dislocation Generation in (InP)_1(GaAs)_n Quaternary Strained Short-Period Superlattices Grown on GaAs
• Reduction Mechanism of Threading Dislocation Density in GaAs Epilayer Grown on Si Substrate by High-Temperature Annealing
• X-ray Photoelectron Spectroscopy Study in Bi_2Sr_2Ca_Nd_xCu_2O_
• Effect of Ni Substitution for Cu in 110 K Phase of (Bi, Pb)-Sr-Ca-Cu-O Superconductors
• Effect of Y Substitution for the Ca Site in the 110 K Phase of (Bi, Pb)-Sr-Ca-Cu-O Superconductors
• XPS Study on the Formation Process of the High-T_c Phase in the Bi-Pb-Sr-Ca-Cu-O System
• XPS Study of Bi-Sr-Ca-Cu-O Superconducting Thin Films Prepared by the rf-Sputtering Method
• Fabrication and Anisotropic Transport Properties of (Hg, Re) Ba_2CaCu_2O_y Epitaxial Thin Films on Vicinal Substrates with Buffer Layers
• A New Homologous Series of Superconducting Cuprates with the 22(n-1)n Structure, (Hg_Tl_x)_2Ba_2Ca_Cu_nO_y (x〜0.4, n=3, 4)
• New Magnetic Phases in the R-Cu-O (R=Tm and Y) Systems
• A Missing Link is Found: a Novel Homologous Series of Superconducting Pb-Based Cuprates
• Advances in High-T_c Single Flux Quantum Device Technologies
• Design and Operation of HTS SFQ Circuit Elements(Innovative Superconducting Devices and Their Applications)
• Development of SFQ Sampler Using High-T_c Superconductor
• Development of Thin Film Multilayer Structures with Smooth Surfaces for HTS SFQ Circuits(Digital Applications, Superconducting Electronic Devices and Their Applications)
• Fabrication of La-Doped YBCO and SrTiO_3-Buffered LSAT Thin Films for Ramp-Edge Josephson Junctions on Superconducting Ground Plane(Recent Progress in Oxide Thin Films by Sputtering)
• Development of Two-Step Deposition Process for Interface-Modified Ramp-Edge Josephson Junction with Low Sheet Inductance and Small Spread : Superconductors
• Influence of Counter-Layer Deposition Condition on Critical Current Spread in Interface-Modified Ramp-Edge Junction Arrays : Superconductors
• Optical Properties of CuO Studied by Spectroscopic Ellipsometry
• Optical Properties of Cu_2O Studied by Spectroscopic Ellipsometry
• Numerical Studies on Parameters for Stable Adiabatic Inversion by Gaussian and Square Pulses
• Measurement of Dipole Matrix Element of Atomic Gd Transitions using Rabi Flopping
• Superlattice Structure of TlBa_2Ca_2Cu_3O_y and Tl_2Ba_2Ca_2Cu_3O_y (c/2)
• Synthesis and Characterization of Single-Phase (Tl_Bi_x)Sr_2Ca_2Cu_3O_y Ceramics
• Superconductivity in a Tl-Sr-Y-Cu-O System
• Superconductive Transition at 120 K in a Tl-Bi-Sr-Ca-Cu-O System
• Superconductivity Near 50 K in a Bi-La-Ca-Cu-O System
• Superconductivity in a Tl-Pb-Pr-Sr-Cu-O System
• Synthesis of Bi-Sr-Ca-Cu-O Ceramics with Large Intergrowth Defects
• Superconductivity in a Ln-Pb-Sr-Ca-Cu-O System
• Formation and Decomposition of Superconducting BiSrCaCu_2O_x Ceramics : Electrical Properties of Condensed Matter
• Superconducting Properties in a Bi-Sr-Ca-Cu-O System : Electrical Properties of Condensed Matter
• Annealing Effect of High-T_c Superconducting Y(Ba_Sr_x)_2Cu_3O_ Ceramics
• Localization and Magnetic Interactions in Semimagnetic Semiconductors at Low Temperatures : Low Temperature Properties of Solids
• Chemical Treatmemt Effect of Si(111) Surfaces in H_2SO_4 : H_2O_2 Solution
• NH_4OH-Treated Si(111) Surfaces Studied by Spectroscopic Ellipsometry and Atomic Force Microscopy
• Interaction between Genetic Effects and Soil Type in Diallel Analysis of Root Shape and Size of Japanese Radish (Raphanus sativus L.)
• Genetic Control of Root Shape at Different Growth Stages in Radish (Raphanus sativs L.)
• The Evaluation of Genotype × Environment Interactions of Citrus Leaf Morphology Using Image Analysis and Elliptic Fourier Descriptors
• Diallel Analysis of Leaf Shape Variations of Citrus Varieties Based on Elliptic Fourier Descriptors
• Diallel Analysis of Root Shape of Japanese Radish (Raphanus sativus L.) Based on Elliptic Fourier Descriptors
• Surface Evolution of GaP Grown on Si Substrates Using Metalorganic Vapor Phase Epitaxy
• Influence of PH_3 Preflow Time on Initial Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy
• High-Temperature Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy
• Structural Investigation of Metalorganic Chemical-Vapor-Deposition-Grown InGaAs Layers on Misoriented GaAs Substrates
• Quasi-Static Analysis of Resonant Brillouin Scattering in ZnSe, ZnTe and CdS
• In-Plane Orientation Control of C-Axis Oriented YBa_2Cu_3O_ Films on MgO Substrates by BaSnO_3 Buffer Layers
• In-plane Orientation of C-Axis Oriented YBa_2Cu_3O_x Films on MgO Substrates
• Surface Morphology of Tl_2Ba_2Ca_2Cu_O_y Thin Films Prepared by Thallium Diffusion Process
• Substitution Effect of Rare Earth Elements for Y in Pb-Sr-Y-Ca-Cu-O with "1212" Structure
• Study on Annealing Treatment and Sr/Ca Ratio for Pb-Sr-Y-Ca-Cu-O Ceramics with "1212" Structure
• In Situ Preparation of Pb-Based Superconducting Thin Films at Low Temperature and Low Oxidizing Atmosphere
• Annealing Effect of (Pb/Cu)SrLaCuO_y Superconductor
• Crystal Structure of (Pb/Cu)SrLaCuO_y Superconductor
• Superconductivity in "1201" Lead Cuprate
• Evaluation of Multilayer Structure and Depth Profile by PAS Using a Transparent Transducer : Photoacoustic Spectroscopy
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• Characterization of La-doped YBCO superconducting films deposited by DC magnetron sputtering at various off-axis geometries
• Properties of (Hg_Re_)Ba_2CaCu_2Oy Grain Boundary Junctions on SrTiO_3 and (LaAlO_3)_-(SrAl_Ta_O_3)_ Substrates with Different Misorientation Angles
• Metalorganic Vapor Phase Epitaxy of InAs Layers on GaAs Substrates Using Low-Temperature Growth of InGaAs Graded Buffer Layers
• Actively and Passively Mode-Locked Nd:YAP(YAlO_3) Laser with Negative Feedback Using CdSe and GaAs
• Self-Defocusing of Mode-Locked Nd:YAG Laser Radiation in GaAs, CdSe and InP
• A Computerized Cycle Ergometer
• The Effect of Zn-Doping on the Magnetic Field Induced Dimensional Crossover in YBa_2Cu_4O_8 : Condensed Matter: Electronic Properties, etc.
• Mossbauer Studies on Particle Volume Distribution of α-FeOOH in Rust Formed on Weathering Steel
• Oxidation and Disproportionation of Wustite Studied by Mossbauer Spectroscopy
• Application of Pulse High-Energy Electron Beams for Decomposition of Chlorofluorocarbon in Atmospheric-Pressure Air
• Optical Constants of ZnSe_xTe_ Ternary Alloys
• Substitution Effect of Sr for Ba of High-T_c Superconducting YBa_2Cu_3O^ Ceramics
• Defect-Controlled Selective Epitaxial Growth of GaP on Si by Migration-Enhanced Epitaxy under Atomic Hydrogen Irradiation
• Optical Properties of Ion-Implanted Si layeres Studied by Spectroscopic Ellipsometry
• Defect-Controlled Selective Epitaxial Growth of GaP on Si by Migration-Enhanced Epitaxy under Atomic Hydrogen Irradiation
• Reduction of Threadimg Dislocation Density and Suppression of Crack Formation in In_xGa_P(x〜0.5) Grown on Si(100) Using Strained Short-Period Superlattices
• A High-Density Phase-Change Optical Disk System Possessing Read/Write Compatibility with 90 mm Magneto-Optical Disks
• Feedback-Controlled Mode-Locking of Nd:Glass Laser Using GaAs
• Numerical Study on Acoustic Emission from Flow Past an Airfoil
• Spectroscopic Ellipsometry Study of (111) and (100)Si Surfaces Etched in Aqueous KOH Solution
• Signal Processing and Sonification of Seismic Electromagnetic Radiation in the ELF Band(Special Section on Acoustic Signal Processing)
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• Effect of Lifetime Broadening on Resonant Brillouin Scattering in ZnTe and ZnSe
• Resonant Brillouin Scattering by LA Phonons in CdS
• On Signal Processing for Electromagnetic Waves Radiation Application to Great Earthquake Prediction
• Recent Developments of High-T_c Electronic Devices with Multilayer Structures and Ramp-Edge Josephson Junctions
• High-Yield Fabrication Method for High-T_c Superconducting Quantum Interference Device Magnetometer with Integrated Multiturn Input Coil

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