Chemical Etching of Thermally-Grown SiO_2 Films on SiC Studied by Spectroscopic Ellipsometry
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概要
- 論文の詳細を見る
Chemical etching characteristics of thermally grown SiO_2 films on 6H-type SiC in aqueous HF solutions have been studied using spectroscopic ellipsometry. Aqueous HF (1.5%) solution can etch thermally grown SiO_2 layers on the (0001)Si and (0001)C faces of SiC at a rate of 〜90 Å/min. A linear regression analysis and an effective medium approximation indicate that the SiO_2/(0001)Si interface formed by thermal oxidation, followed by aqueous HF etching, is much rougher than the SiO_2/(0001)C interface produced by the same procedure.
- 社団法人応用物理学会の論文
- 1994-04-15
著者
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Adachi Sadao
Department Of Electronic Engineering Gunma University
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NINOMIYA Susumu
Department of Electronic Engineering, Faculty of Engineering, Gunma University
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