Spectroscopic Ellipsometry Study of Si Surfaces Modified by Low-Energy Ar^+-Ion Irradiation

概要

論文の詳細を見る
Spectroscopic ellipsometry (SE) measurements are carried out to study structural modification of Si surfaces induced by low-energy Ar^+-ion irradiation. The Ar^+ ions are irradiated on Si(100) substrates at acceleration voltages between -150 and 0 V and substrate temperatures between 20 and 410℃. The SE data clearly suggest that the Ar^+-ion irradiation modifies Si surfaces depending upon Ar^+-ion energy and substrate temperature. An effective medium approximation (EMA) and a linear regression analysis (LRA) suggest that the surface layers modified with Ar^+ ions at higher substrate temperatures consist of volume fractions of voids, crystalline and amorphous Si and those modified at lower substrate temperatures consist of volume fractions of SiO_2, amorphous Si and voids. SE has thus proven to be an easy, fast and nondestructive technique that can be used to assess important structural parameters of Ar^+-ion-modified Si surfaces.
社団法人応用物理学会の論文
1993-11-15