Phosphorus-Ion-Implantation into ZnSe Single Crystals
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概要
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The photoelectric properties of phosphorus-ion-implanted ZnSe single crystals have been investigated by means of photoconductivity and photoluminescence measurements. These measurements have shown the existence of a shallow level 0.07 eV and a green band (0.49 μm) originating from phosphorus impurity. Anomalous behaviours of copper residual impurity have been observed also in non-implanted ZnSe single crystals from the photoluminescence measurements. A phosphorus-ion-implanted ZnSe diode has shown electroluminescence in both forward and reverse bias directions. The emission mechanisms in the forward and reverse biases for the diode are thought to be the minority carrier injection and the impact ionization excitation, respectively.
- 社団法人応用物理学会の論文
- 1976-08-05
著者
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Adachi Sadao
Department Of Electronic Engineering Gunma University
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Machi Yoshio
Department Of Electronic Engineering Tokyo Denki University
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