Optical Constants of Amorphous Ga_2Te_3 and In_2Te_3

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概要

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• The optical response in amorphous (a-) Ga_2Te_3 and In_2Te_3 semiconductors in the 1.2-5.2-eV photon-energy range at room temperature has been measured by spectroscopic ellipsometry. These materials were obtained directly from the melt. It is found that the dielectric functions, ε(E)=ε_1(E)+iε_2(E), of a-Ga_2Te_3 and a-In_2Te_3 have a strong resemblance to those of amorphous tetrahedrally bonded semiconductors. The optical energy gap estimated from the Plots of Eε_2(E)^⁢2/1> versus E is 1.2 eV for both a-Ga_2Te_3 and a-In_2Te_3. Dielectric-related optical constants, such as the complex refractive index, absorption coefficient and normal-incidence reflectivity, of these amorphous semiconductors have also been presented.

• 社団法人応用物理学会の論文
• 1994-11-15

著者

• Adachi Sadao

  Department Of Electronics Osaka University

• Adachi Sadao

  Department Of Electronic Engineering Gunma University

• TAKADA Kazuhiro

  Department of Chemistry, Faculty of Science, Hokkaido University

• OZAKI Shunji

  Department of Electronic Engineering, Faculty of Engineering, Gunma University

• Takada Kazuhiro

  Department Of Electronic Engineering Faculty Of Engineering Gunma University

• Ozaki Shunji

  Department Of Electronic Engineering Faculty Of Engineering Gunma University

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