Electroreflectance Study of (AlxGa1-x)0.5In0.5P Alloys
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概要
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Electroreflectance spectroscopy has been applied to the study of (Al xGa1- x)0.5In0.5P quaternary systems lattice-matched to GaAs. The measurements are made at room temperature in the photon-energy range of 1.7–5.8 eV. The composition dependence of the E0, E0+Δ0, E1, E2 and E2+δ gaps has been determined. The lowest direct band gap is found to be given by E0(x)=1.90+0.57x+0.11×2 eV. The E0+Δ0, and E1 gaps are written as similar quadratic equations. On the other hand, the variation of the E2 and E2+δ gaps is found to be approximately linear. The lowest direct-to-indirect gap crossover is also estimated to occur at x∼0.63.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-15
著者
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Adachi Sadao
Department Of Electronic Engineering Gunma University
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SATO Masahiro
Research Center for Compact Chemical System, AIST
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Ozaki Shunji
Department Of Electronic Engineering Faculty Of Engineering Gunma University
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Ohtsuka Kouji
Research and Development Division, Sanken Electric Co., Ltd., Niiza-shi, Saitama 352, Japan
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Ohtsuka Kouji
Research And Development Division Sanken Electric Co. Ltd.
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Sato Masahiro
Research And Development Division Sanken Electric Co. Ltd.
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