Analysis of Optical Constants for Sputter-Deposited InSb Films Based on the Interband-Transition Model

概要

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The dielectric-function spectra for InSb films rf-sputter-deposited on (0001) and (011^^-0) sapphire substrates have been analyzed by using a simplified interband transition model. The film deposited on (0001) sapphire is epitaxial, while the film on (011^^-0) sapphire is polycrystalline in structural properties. The model based on the Kramers-Kronig transformation includes the E_0, E_0+?_0, E_1, E_1+?_1, E^'_0, E^'_0+?^'_0, E_2, E^'_1 gaps and indirect gap (E^L_g) as the main dispersion mechanisms. The analysis suggests that the sputter-deposited InSb films include a small and a large number of void networks in the film medium for epitaxial and polycrystalline films, respectively. Dielectric-function-related optical constants, such as the refractive index and extinction coefficient, of the InSb films are also presented and analyzed.
社団法人応用物理学会の論文
1992-04-15